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參數資料
| 型號： | HSDL-4270 |
| 廠商： | Avago Technologies Ltd. |
| 英文描述： | High-Performance T-1 (5mm) AlGaAs Infrared (940nm) Lamp |
| 中文描述： | 性能優異的T - 1（5mm）的AlGaAs的紅外（940nm）燈 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 139K |
| 代理商： | HSDL-4270 |
2
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Reference
Operating Temperature
T
O
-40
85
°C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Reference
Forward Voltage
V
F
-
1.3
1.5
1.4
1.7
V
I
FDC
=20mA
I
FDC
=100mA
Figure 2
Figure 3
Forward Voltage
Temperature Coefficient
V/
T
-
-1.4
-
mV/°C
I
FDC
=100mA
Figure 4
Series Resistance
R
S
-
3.0
-
Ohms
I
FDC
=100mA
Diode Capacitance
C
O
-
27
-
pF
V
bias
=0V,
f=1MHz
Thermal Resistance,
Junction to Ambient
R
θ
ja
-
300
-
°C/W
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Reference
Radiant On-Axis Intensity
I
E
76
100
-
mW/Sr
I
FDC
=100mA
Figure 5
Radiant On-Axis Intensity
Temperature Coefficient
I
E
/
T
-
-0.48
-
%/°C
I
FDC
=100mA
Viewing Angle
2
θ
1/2
λ
pk
λ
/
T
-
15
-
°
Figure 7
Peak Wavelength
-
940
-
nm
Figure 1
Peak wavelength
Temperature Coefficient
-
0.26
-
nm/°C
I
FDC
=100mA
Spectral Width
λ
45
-
nm
I
FDC
=20mA
Figure 1
Optical Rise and Fall Time
t
r
/t
f
1.3
-
μ
s
I
FDC
=100mA
Duty Ratio = 50%
Pulse Width=10
μ
s
Parameter
Symbol
Minimum
Maximum
Unit
Reference
Peak Forward Current
I
FPK
-
500
mA
Figure 3
Duty cycle = 20%
Pulse Width = 100us
Forward Current
I
FDC
-
100
mA
[1]
Power Dissipation
P
DISS
-
170
mW
Reverse Voltage
V
R
5
-
V
I
R
=100uA
Storage Temperature
T
S
-40
100
°C
LED Junction Temperature
T
J
110
°C
Lead Soldering Temperature
260 for 5 sec
°C
Notes:
1. Derate as shown in Figure 6.
Absolute Maximum Ratings at 25
°
C
Electrical Characteristics at 25
°
C
Optical Characteristics at 25
°
C
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