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參數資料
| 型號： | HSMBJ5931B |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SILICON 3.0W ZENER DIOCE |
| 中文描述： | 18 V, 1.56 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 80K |
| 代理商： | HSMBJ5931B |
MSC1299.PDF
ISO 9001 CERTIFIED
REV E 10/19/99
ZENNER
VOLTAGE
V
T
(NOTE 1)
Volts
TEST
CURRENT
I
ZT
DYNAMIC
IMPEDANCE
Z
ZT
(NOTE 2)
Ohms
KNEE
CURRENT
I
ZK
KNEE
IMPEDANCE
Z
ZK
(NOTE 2)
OHMS
REVERSE
CURRENT
I
R
REVERSE
VOLTAGE
V
R
MAX.DC
CURRENT
I
ZM
(NOTE 3)
MA
PART
NUMBER
mA
mA
μ Adc
Volts
HSMBJ5913B
3.3
113.6
10.0
1.0
500
100.0
1.0
749
HSMBJ5914B
3.6
104.2
9.0
1.0
500
75.0
1.0
686
HSMBJ5915B
3.9
96.1
7.5
1.0
500
25.0
1.0
633
HSMBJ5916B
4.3
87.2
6.0
1.0
500
5.0
1.0
574
HSMBJ5917B
4.7
79.8
5.0
1.0
500
5.0
1.5
526
HSMBJ5918B
5.1
73.5
4.0
1.0
350
5.0
2.0
485
HSMBJ5919B
5.6
66.9
2.0
1.0
250
5.0
3.0
440
HSMBJ5920B
6.2
60.5
2.0
1.0
200
5.0
4.0
397
HSMBJ5921B
6.8
55.1
2.5
1.0
200
5.0
5.2
363
HSMBJ5922B
7.5
50.0
3.0
0.5
400
5.0
6.0
330
HSMBJ5923B
8.2
45.7
3.5
0.5
400
5.0
6.5
300
HSMBJ5924B
9.1
41.2
4.0
0.5
500
5.0
7.0
270
HSMBJ5925B
10
37.5
4.5
0.25
500
5.0
8.0
247
HSMBJ5926B
11
34.1
5.5
0.25
550
1.0
8.4
206
HSMBJ5927B
12
31.2
6.5
0.25
550
1.0
9.1
206
HSMBJ5928B
13
28.9
7.0
0.25
550
1.0
9.9
189
HSMBJ5929B
15
25.0
9.0
0.25
600
1.0
11.4
165
HSMBJ5930B
16
23.4
10.0
0.25
600
1.0
12.2
153
HSMBJ5931B
18
20.8
12.0
0.25
650
1.0
13.7
137
HSMBJ5932B
20
18.7
14.0
0.25
650
1.0
15.2
124
HSMBJ5933B
22
17.0
17.5
0.25
650
1.0
16.7
112
HSMBJ5934B
24
15.6
19.0
0.25
700
1.0
18.2
102
HSMBJ5935B
27
13.9
23.0
0.25
700
1.0
20.6
91
HSMBJ5936B
30
12.5
28.0
0.25
750
1.0
22.8
83
HSMBJ5937B
33
11.4
33.0
0.25
800
1.0
25.1
74
HSMBJ5938B
36
10.4
38.0
0.25
850
1.0
27.4
68
HSMBJ5939B
39
9.6
45.0
0.25
900
1.0
29.7
63
HSMBJ5940B
43
8.7
53.0
0.25
950
1.0
32.7
56
HSMBJ5941B
47
8.0
67.0
0.25
1000
1.0
35.8
51
HSMBJ5942B
51
7.3
70.0
0.25
1100
1.0
38.8
48
HSMBJ5943B
56
6.7
86.0
0.25
1300
1.0
42.6
43
HSMBJ5944B
62
6.0
100
0.25
1500
1.0
47.1
40
HSMBJ5945B
68
5.5
120
0.25
1700
1.0
51.2
36
HSMBJ5946B
75
5.0
140
0.25
2000
1.0
56.0
33
HSMBJ5947B
82
4.6
160
0.25
2500
1.0
62.2
30
HSMBJ5948B
91
4.1
200
0.25
3000
1.0
69.2
26
HSMBJ5949B
100
3.7
250
0.25
3100
1.0
76.0
25
HSMBJ5950B
110
3.4
300
0.25
4000
1.0
83.6
22
HSMBJ5951B
120
3.1
280
0.25
4500
1.0
91.2
20
HSMBJ5952B
130
2.9
450
0.25
5000
1.0
98.8
18
HSMBJ5953B
150
2.5
600
0.25
6000
1.0
114.0
17
HSMBJ5954B
160
2.3
700
0.25
6500
1.0
121.6
15
HSMBJ5955B
180
2.1
900
0.25
7000
1.0
136.8
13
HSMBJ5956B
200
1.9
1200
0.25
8000
1.0
152.0
12
8700 E. Thomas Road
Scottsdale, AZ 85251
Tel: (480) 941-6300
Fax (480) 947-1503
Electrical Characteristics @ TL = 30°C
HSMBJ5913B
thru
HSMBJ5956B
SILICON
3.0 W
ZENER DIODE
FEATURES:
Surface mount equivalent to 1N5913B thru 1N5956B
Popular HSMBJ Package outline-Small and Rugged
Zener voltage 3.3V to 200V
Constructed with an Oxide Passivated All Diffused Die
MAXIMUM RATINGS:
Junction and Storage Temperature: -55
°
C to +150
°
C
DC Power Dissipation 3 W at Lead Temp. T
L
≤
75
°
C
Derate above +75
°
C: 40 mW/
°
C
Forward voltage @ 200mA: 1.2Volts and T
L
= 30
°
C
Mechanical
Characteristics
Case: Similar to DO-214AA
Terminals: Leads tin plated
Thermal resistance: 25°C/W
(maximum) junction to lead
at mounting plane
Polarity: Cathode indicated
by a band
Packaging: Standard 12 mm
tape 2500 per 13 inch reel
see (EIA Standard RS-481)
DIMENSIONS
INCHES
MIN
.073
.160
.130
.205
.075
.030
.006
MILLIMETERS
MIN
1.85
4.06
3.30
5.21
1.91
.76
.15
DIM
MAX
.087
.180
.155
.220
.130
.060
.016
MAX
2.21
4.57
3.94
5.59
3.30
1.52
.41
A
B
C
D
E
F
G
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HSMBJ5932B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SILICON 3.0W ZENER DIOCE |
| HSMBJ5933B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SILICON 3.0W ZENER DIOCE |
| HSMBJ5934B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SILICON 3.0W ZENER DIOCE |
| HSMBJ5935B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SILICON 3.0W ZENER DIOCE |
| HSMBJ5936B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SILICON 3.0W ZENER DIOCE |
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