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參數資料
| 型號： | HSMS-8012 |
| 英文描述： | Schottky Barrier Chips for Hybrid Integrated Circuits(混合集成電路應用的肖特基勢壘二極管) |
| 中文描述： | 肖特基芯片的混合集成電路（混合集成電路應用的肖特基勢壘二極管） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 36K |
| 代理商： | HSMS-8012 |
Schottky Barrier Chips for
Hybrid Integrated Circuits
Technical Data
Features
Thermocompression/
Thermosonically Bondable
Gold Metallization
Silicon Nitride Passivation
Uniform Electrical
Characteristics
Batch Matched Versions
Available
Planar Construction
Available in Many Electrical
Selections
Ideal for Hybrid Integrated
Circuits
HSMS-0005/06
HSMS-8002/12
Chip Dimensions
D
Y
Z
X
2
X
DIMENSIONS
D
X
Y
Z
Top Contact
NOTES:
1. Dimensions in mIcrons (1/1000 inch).
2. Dimension tolerance is
±
30
μ
.
3. All contact metallization is gold.
PART NO. HSMS-
-0006/-8002
75
(3)
250
(10)
275
(11)
150
(8)
Anode
-0005
55
(2)
250
(10)
250
(10)
150
(6)
Cathode
X
2
Description/Applications
These Schottky chips are de-
signed for hybrid applications at
DC through K-band frequencies.
The passivated planar construc-
tion of these Schottky chips
provides a wide temperature
range capability combined with
broad bandwidth performance.
A variety of chips are provided
which are optimized for various
analog and digital applications.
Typical applications of Schottky
chips are mixing, detecting,
switching, gating, sampling, and
wave shaping.
This series of Schottky diode
chips are specifically designed for
analog and digital hybrid appli-
cations requiring thermosonic or
thermocompression bonding
techniques. The large bonding pad
allows easy bonding. The top
metallization is a layer of gold
deposited on adhesive metal
layers for a tarnish-free surface
that allows either thermosonic or
thermocompression bonding
techniques. The bottom metalli-
zation is also gold, suitable for
epoxy or eutectic die attach
methods.
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| HSMS-2700 | High Performance Schottky Diode for Transient Suppression(用于瞬變抑制的高性能肖特基二極管) |
| HSMS-2702 | High Performance Schottky Diode for Transient Suppression(用于瞬變抑制的高性能肖特基二極管) |
| HSMS--270B | High Performance Schottky Diode for Transient Suppression(用于瞬變抑制的高性能肖特基二極管) |
| HSMS--270C | High Performance Schottky Diode for Transient Suppression(用于瞬變抑制的高性能肖特基二極管) |
| HSMS-280B | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HSMS-8101 | 制造商:Avago Technologies 功能描述:DIODE SCHOTTKY MIXER SOT-23 |
| HSMS-8101-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Surface Mount Microwave Schottky Mixer Diodes |
| HSMS-8101-BLKG | 功能描述:射頻混合器 4 VBR 0.26 pF RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| HSMS-8101SINGLE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount Microwave Schottky Mixer Diodes (69K in pdf) |
| HSMS-8101-TR1 | 功能描述:DIODE SCHOTTKY MIXER 4V SOT23 RoHS:否 類別:分離式半導體產品 >> RF 二極管 系列:- 標準包裝:3,000 系列:- 二極管類型:PIN - 單 電壓 - 峰值反向(最大):50V 電流 - 最大:50mA 電容@ Vr, F:0.4pF @ 50V，1MHz 電阻@ Vr, F:4.5 歐姆 @ 10mA，100MHz 功率耗散（最大）:100mW 封裝/外殼:SC-70，SOT-323 供應商設備封裝:3-MCP 包裝:帶卷 (TR) |
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