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參數資料
| 型號： | HT772 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進步黨外延平面晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 45K |
| 代理商： | HT772 |
HI-SINCERITY
MICROELECTRONICS CORP.
HT772
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HT200209
Issued Date : 1993.05.15
Revised Date : 2002.05.08
Page No. : 1/4
HT772
HSMC Product Specification
Description
The HT772 is designed for using in output stage of 1w audio amplifier,
voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)....................................................................................... 1 W
Total Power Dissipation (Tc=25
°
C) ..................................................................................... 10 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -40 V
BVCEO Collector to Emitter Voltage................................................................................... -30 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current (DC)..................................................................................................... -3 A
IC Collector Current (Pulse) ................................................................................................. -7 A
IB Base Current (DC) ........................................................................................................ -0.6 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
-40
-30
-5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-0.3
-1
-
200
80
55
Max.
-
-
-
-1
-1
-0.5
-2
-
400
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-30V
VEB=-3V
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
IC=-20mA, VCE=-2V
IC=-1A, VCE=-2V
IC=-0.1A, VCE=-5V
VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE2
Rank
Range
Q
P
E
100-200
160-320
200-400
TO-126
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