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參數(shù)資料
| 型號： | HTIP117D |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 56K |
| 代理商： | HTIP117D |
HI-SINCERITY
MICROELECTRONICS CORP.
HTIP117D
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HD200204
Issued Date : 2002.04.01
Revised Date : 2005.08.18
Page No. : 1/4
HTIP117D
HSMC Product Specification
Description
The HTIP117D is designed for use in general purpose amplifier and low-speed
switching applications.
Absolute Maximum Ratings
(T
A
=25
°
C)
Maximum Temperatures
Storage Temperature................................................................... -55 ~ +150
°
C
Junction Temperature.......................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (T
C
=25
°
C).................................................................................................................... 10 W
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage ...................................................................................................................... -100 V
BV
CEO
Collector to Emitter Voltage................................................................................................................... -100 V
BV
Emitter to Base Voltage............................................................................................................................. -5 V
I
C
Collector Current (Continue)............................................................................................................................ -4 A
I
CP
Collector Current (Peak)................................................................................................................................. -6 A
Electrical Characteristics
(T
A
=25
°
C)
Symbol
BV
CBO
BV
CEO
I
CBO
I
CEO
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE1
*h
FE2
Cob
Min.
-100
-100
-
-
-
-
-
1
500
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-1
-2
-2
-2.5
-2.8
-
-
200
Unit
V
V
mA
mA
mA
V
V
K
Test Conditions
I
C
=-1mA
I
C
=-30mA
V
CB
=-100V
V
CE
=-50V
V
EB
=-5V
I
C
=-2A, I
B
=-8mA
I
C
=-2A, V
CE
=-4V
I
C
=-1A, V
CE
=-4V
I
C
=-2A, V
CE
=-4V
V
CB
=-10V, f=0.1MHz
pF
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
Darlington Schematic
TO-126ML
R2
R1
C
E
B
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