
HI-SINCERITY
MICROELECTRONICS CORP.
HTL295J
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HJ200203
Issued Date : 2000.12.21
Revised Date : 2002.01.23
Page No. : 1/3
HTL295J
HSMC Product Specification
Description
The HTL295J is designed for high voltage low power switching
applications especially for use in telephone and telecommunication
circuits.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature...................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C).................................................................................... 1.5 W
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage...................................................................................... -500 V
VCEO Collector to Emitter Voltage................................................................................... -500 V
VEBO Emitter to Base Voltage............................................................................................. -6 V
IC Collector Current ...................................................................................................... -300 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
-500
-500
-6
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
Max.
-
-
-
-1
-10
-0.2
-500
-2
-3
-750
-
250
-
-
30
Unit
V
V
V
uA
uA
uA
mV
V
V
mV
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA
VCB=-500V, IE=0
VCE=-500V, IB=0
VEB=-6V, IC=0
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-80mA, IB=-4mA
IC=-10mA, IB=-1mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-20mA
VCE=-10V, IC=-80mA
VCE=-20V, IE=-10mA, f=1MHz
VCB=-20V, f=1MHz, IE=0
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
-
-
-
-
-
-
-
50
60
50
10
-
MHz
pF
TO-252