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參數(shù)資料
| 型號： | HTZ110A25K |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | High Voltage Diode Rectifier Module |
| 中文描述： | 3.5 A, 25000 V, SILICON, RECTIFIER DIODE |
| 封裝： | ZA, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 205K |
| 代理商： | HTZ110A25K |
LARONTROL
Electronic Devices
Distributed by
USA
3540 Bassett Street
Santa Clara, CA 95054
Phone: (408) 982-0700
FAX: (408) 496-0670
EUROPE
IXYS Semiconductor GmbH
Lampertheim Germany
Phone: +49.6206.503.0
Fax: +49.6206.503.627
www.IXYS.
com
Type
Number
Repetitive
Peak
Minimum
Avalanche
Voltage
V
(BR)R
CIRCUIT DIAGRAM
IXYS reserves the right to change limits, test conditions and dimensions.
HTZ110A Series
I
F(AV)
= 3.5 A
V
RRM
= 25000 V
High Voltage
Diode Rectifier
Module
Centre Tap
-
V
RRM
-
_
+
CURRENT RATINGS - AIR COOLED
I
F(AV)
Mean forward current
I
F
Continuous (direct) forward current
R
th(j-a)
Thermal resistance junction to ambient
Half wave resistive load T
amb
= 35oC
T
amb
= 35oC
3.5
4.3
2.3 oC/W
A
A
CURRENT RATINGS - OIL COOLED
I
F(AV)
Mean forward current
I
T
Continuous (direct) forward current
R
th(j-o)
Thermal resistance junction to oil
Half wave resistive load T
oil
= 60oC
T
oil
= 60oC
5.7
7.0
0.93 oC/W
A
A
SURGE RATINGS
I
2
t
I
FSM
I
2
t for fusing
Surge (non-repetitive) forward current
10 ms half sine T
vj
= 150oC
T
vj
= 150oC
200 A
2
sec
200
A
TEMPERATURE AND FREQUENCY RATINGS
T
vj
Virtual junction temperature
Forward (conducting)
Reverse (blocking)
180
180
oC
oC
oC
Hz
T
stg
f
Storage temperature range
Frequency range
-40 to 100
20 to 400
CHARACTERISTICS
T
case
= 25oC unless otherwise stated
V
FM
Forward voltage
I
RM
Peak reverse current
At 12 Amps peak
At V
RRM
; T
case
= 150°C
max 18.3
max 0.5
V
mA
HTZ110A25K
HTZ110A22K
HTZ110A19K
HTZ110A16K
25000
22000
19000
16000
27200
24000
20800
17600
Dimensioned Outlines
Dimensions shown are maximum in mm
Weight typ.: 1,55 Kg
Issue 1 June 1998
368
48
48
348
150
150
300
6.8 DIA
BOTH ENDS
TAPPED M6, 3 OFF
ZA
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