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參數資料
| 型號： | HUF75321S3 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 31A I(D) | TO-262AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 55V的五（巴西）直|第31A條（?。﹟對262AA |
| 文件頁數： | 1/10頁 |
| 文件大?。?/td> | 215K |
| 代理商： | HUF75321S3 |
2001 Fairchild Semiconductor Corporation
HUF75307P3, HUF75307D3, HUF75307D3S Rev. B
HUF75307P3, HUF75307D3, HUF75307D3S
15A, 55V, 0.090 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75307.
Features
15A, 55V
Simulation Models
- Temperature Compensated PSPICE
and SABER
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75307P3
TO-220AB
75307P
HUF75307D3
TO-251AA
75307D
HUF75307D3S
TO-252AA
75307D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF75307D3ST.
D
G
S
JEDEC TO-220AB
JEDEC TO-251AA
JEDEC TO-252AA
GATE
SDRAIN
DRAIN
(FLANGE)
SOURCE
DRAIN
DRAIN
GATE
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet
December 2001
相關PDF資料 |
PDF描述 |
|---|---|
| HUF75321S3ST | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 31A I(D) | TO-263AB |
| HUF75329D3ST | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 20A I(D) | TO-252AA |
| HUF75329S3ST | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 42A I(D) | TO-263AB |
| HUF75332S3 | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 52A I(D) | TO-262AA |
| HUF75332S3ST | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 60A I(D) | TO-263AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HUF75321S3S | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75321S3ST | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75329D3 | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75329D3S | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75329D3S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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