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參數(shù)資料
| 型號(hào)： | HUF76407D3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(11A, 60V, 0.107Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 12 A, 60 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 334K |
| 代理商： | HUF76407D3 |
5
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
0.6
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
0.9
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
100
1000
0.1
1.0
10
60
10
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
2
4
6
8
10
0
2
4
6
8
10
0
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 30V
I
D
= 12A
I
D
= 5A
I
D
= 3A
WAVEFORMS IN
DESCENDING ORDER:
50
100
150
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 30V, I
D
= 6A
t
r
t
f
t
d(ON)
t
d(OFF)
20
40
60
80
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 30V, I
D
= 12A
t
r
t
d(ON)
t
f
t
d(OFF)
HUF76407D3, HUF76407D3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF76407D3S | 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(11A, 60V, 0.107Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
| HUF76407P3 | 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(12A, 60V, 0.107Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
| HUF76409D3 | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(17A, 60V, 0.071Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
| HUF76409D3S | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(17A, 60V, 0.071Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
| HUF76409P3 | 17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(17A, 60V, 0.070Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76407D3S | 功能描述:MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76407D3ST | 功能描述:MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76407DK8 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76407DK8T | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76407DK8T_R4810 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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