- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385409 > HUF76409P3 (INTERSIL CORP) 17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(17A, 60V, 0.070Ω N溝道邏輯電平功率MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | HUF76409P3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(17A, 60V, 0.070Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
| 中文描述： | 18 A, 60 V, 0.074 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 105K |
| 代理商： | HUF76409P3 |
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
5
10
20
25
50
75
100
125
150
175
0
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
V
GS
= 4.5V
15
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
2
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
T
100
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
200
10
I
D
,
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
V
GS
= 5V
HUF76409P3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF76419P3 | 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(27A, 60V, 0.040Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
| HUF76423P3 | 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(33A, 60V, 0.035Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
| HUF76439P3 | 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(71A, 60V, 0.014Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
| HUF76439S3S | 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(71A, 60V, 0.014Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
| HUF76619D3 | 18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(18A, 100V, 0.087Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76409S3S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 17A I(D) | TO-263AB |
| HUF76409T3S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 |
| HUF76413D3 | 功能描述:MOSFET 20a 60V 0.056 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76413D3S | 功能描述:MOSFET TO-252 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76413D3ST | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。