- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385409 > HUF76419P3 (INTERSIL CORP) 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(27A, 60V, 0.040Ω N溝道邏輯電平功率MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | HUF76419P3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(27A, 60V, 0.040Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
| 中文描述： | 29 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 334K |
| 代理商： | HUF76419P3 |
4-4
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
100
1
10
100
200
1
200
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
10
60
0.001
0.01
0.1
1
10
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
10
20
30
40
50
60
1
2
3
4
5
0
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
10
20
30
40
50
60
0
1
2
3
4
0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 5V
V
GS
= 10V
V
GS
= 4V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
30
40
50
2
4
6
8
10
20
I
D
= 10A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 29A
r
D
,
O
)
I
D
= 19A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
0.5
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 29A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
HUF76419P3, HUF76419S3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF76423P3 | 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(33A, 60V, 0.035Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
| HUF76439P3 | 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(71A, 60V, 0.014Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
| HUF76439S3S | 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(71A, 60V, 0.014Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
| HUF76619D3 | 18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(18A, 100V, 0.087Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
| HUF76619D3S | 18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(18A, 100V, 0.087Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76419S3S | 功能描述:MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76419S3ST | 功能描述:MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76419S3ST_F085 | 功能描述:MOSFET 60V, 29A, 35mOhm N-Channel Mosfet RoHS:否 制造商:Fairchild Semiconductor 晶體管極性:N-Channel 汲極/源極擊穿電壓:60 V 閘/源擊穿電壓:16 V 漏極連續(xù)電流:29 A 電阻汲極/源極 RDS（導(dǎo)通）:35 mOhms 配置:Single 最大工作溫度:+ 175 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TO-263AB 封裝:Reel |
| HUF76419S3ST_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF76419S3ST_R4908 | 制造商:Fairchild Semiconductor Corporation 功能描述:FSCHUF76419S3ST_R4908 TO-263AB, SINGLE, 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。