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參數資料
| 型號： | HUFA75333S3S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs |
| 中文描述： | 66 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數： | 1/10頁 |
| 文件大小： | 234K |
| 代理商： | HUFA75333S3S |
2001 Fairchild Semiconductor Corporation
HUFA75333G3, HUFA75333P3, HUFA75333S3S Rev. B
HUFA75333G3, HUFA75333P3, HUFA75333S3S
66A, 55V, 0.016 Ohm. N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching convertors, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75333.
Features
66A, 55V
Simulation Models
- Temperature Compensated PSPICE and SABER
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75333G3
TO-247
75333G
HUFA75333P3
TO-220AB
75333P
HUFA75333S3S
TO-263AB
75333S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75333S3ST.
D
G
S
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(TAB)
GATE
SDRAIN
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet
December 2001
相關PDF資料 |
PDF描述 |
|---|---|
| HUFA75333G3 | 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs |
| HUFA75333P3 | 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs |
| HUFA75337G3 | TRANS PNP BIPOLAR 45V SOT323 |
| HUFA75337P3 | 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs |
| HUFA75337S3S | 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HUFA75333S3ST | 功能描述:MOSFET 66a 55V 0.016Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75337G3 | 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75337P3 | 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75337S3S | 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75337S3ST | 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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