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參數資料
| 型號： | HUFA75639S3R4851 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 115V V(BR)DSS | 56A I(D) | TO-262AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 115伏五（巴西）直|第56A條（丁）|對262AA |
| 文件頁數： | 1/10頁 |
| 文件大小： | 657K |
| 代理商： | HUFA75639S3R4851 |
2001 Fairchild Semiconductor Corporation
HUFA75639S3R4851 Rev. A
File Number
4962
HUFA75639S3R4851
56A, 115V, 0.025 Ohm, N-Channel
UltraFET Power MOSFET
This N-Channel power MOSFETs is manufactured using the
innovative UltraFET process. This advanced process
technology achieves the lowest possible on-resistance per
silicon area, resulting in outstanding performance. This
device is capable of withstanding high energy in the
avalanche mode and the diode exhibits very low reverse
recovery time and stored charge. It was designed for use in
applications where power efficiency is important, such as
switching regulators, switching converters, motor drivers,
relay drivers, low-voltage bus switches, and power
management in portable and battery-operated products.
Formerly developmental type TA75639.‘
Symbol
Features
56A, 115V
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and Saber Thermal Impedance Models
- www.Intersil.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-262AA
Absolute Maximum Ratings
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.mtp.intersil.com/automotive.html.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75639S3R4851 TO-262AA
R4851
NOTE: When ordering, use the entire part number.
D
G
S
SOURCE
DRAIN
GATE
T
C
= 25
o
C, Unless Otherwise Specified
HUFA75639S3R4851
115
115
±
20
UNITS
V
V
V
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DSS
DGR
GS
D
DM
56
Figure 4
A
AS
Figures 6, 14, 15
200
1.35
-55 to 175
D
o
W
W/
o
C
J
, T
STG
o
C
L
pkg
300
260
o
o
C
C
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Data Sheet
November 2000
Title
UFA
639
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HUFA75639S3S | 功能描述:MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75639S3ST | 功能描述:MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75639S3ST_F085A | 功能描述:MOSFET N-CHAN UltraFET Pwr 56A 100V 0.025Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75639S3ST_S2457 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUFA75645P3 | 功能描述:MOSFET 75a 100V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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