- 您現在的位置：買賣IC網 > PDF目錄384449 > HUFA75645P3 (FAIRCHILD SEMICONDUCTOR CORP) 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs PDF資料下載
參數資料
| 型號： | HUFA75645P3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs |
| 中文描述： | 75 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數： | 1/10頁 |
| 文件大小： | 236K |
| 代理商： | HUFA75645P3 |
2001 Fairchild Semiconductor Corporation
HUFA75645P3, HUFA75645S3S Rev. B
HUFA75645P3, HUFA75645S3S
75A, 100V, 0.014 Ohm, N-Channel,
UltraFET Power MOSFETs
Packaging
JEDEC TO-220AB
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.014
,
V
GS
=
10V
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and Saber Thermal Impedance Models
- www.fairchild.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Ordering Information
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.mtp.fairchild.com/automotive.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
JEDEC TO-263AB
DRAIN
(FLANGE)
DRAIN
GATE
SOURCE
HUFA75645P3
GATE
SOURCE
DRAIN
(FLANGE)
HUFA75645S3S
D
G
S
PART NUMBER
PACKAGE
BRAND
HUFA75645P3
TO-220AB
75645P
HUFA75645S3S
TO-263AB
75645S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA75645S3ST.
HUFA75645P3, HUFA75645S3S
100
100
±
20
UNITS
V
V
V
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Continuous (T
C
= 25
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (T
C
= 100
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
NOTES:
1. T
J
= 25
C to 150
C.
CAUTION:
Stresses above those listed in “Absol24ute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DSS
DGR
GS
o
D
D
o
DM
75
65
Figure 4
A
A
Figures 6, 14, 15
310
2.07
-55 to 175
D
o
W
W/
o
C
J
, T
STG
o
C
L
pkg
300
260
o
o
C
C
o
o
Data Sheet
December 2001
相關PDF資料 |
PDF描述 |
|---|---|
| HUFA75645S3S | 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs |
| HUFA75652G3 | 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET |
| HUFA75823D3 | 14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET |
| HUFA75823D3S | 14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET |
| HUFA75823D3ST | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 14A I(D) | TO-252AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HUFA75645S3S | 功能描述:MOSFET 75a 100V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75645S3ST | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-263AB |
| HUFA75652G3 | 功能描述:MOSFET 75a 100V 0.008 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75823D3 | 功能描述:MOSFET 14a 150V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75823D3S | 功能描述:MOSFET 14a 150V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。