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參數資料
| 型號： | HUFA75829D3S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 18 A, 150 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數： | 1/10頁 |
| 文件大小： | 192K |
| 代理商： | HUFA75829D3S |
2001 Fairchild Semiconductor Corporation
HUFA75829D3, HUFA75829D3S Rev. B
HUFA75829D3, HUFA75829D3S
18A, 150V, 0.110 Ohm, N-Channel,
UltraFET Power MOSFETs
Packaging
JEDEC TO-251AA
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.110
,
V
GS
=
10V
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Ordering Information
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SDRAIN
HUFA75829D3
GATE
SOURCE
DRAIN
(FLANGE)
HUFA75829D3S
D
G
S
PART NUMBER
PACKAGE
BRAND
HUFA75829D3
TO-251AA
75829D
HUFA75829D3S
TO-252AA
75829D
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA75829D3ST.
HUFA75829D3, HUFA75829D3S
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
150
V
150
V
±
20
V
18
13
Figure 4
A
A
Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
110
0.73
W
W/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
-55 to 175
300
260
o
C
o
C
Data Sheet
December 2001
相關PDF資料 |
PDF描述 |
|---|---|
| HUFA75829D3ST | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 18A I(D) | TO-252AA |
| HUFA75831SK8T | 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET |
| HUFA75831SK8 | 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET |
| HUFA75842P3 | 43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET |
| HUFA75842S3S | 43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HUFA75829D3ST | 功能描述:MOSFET 18a 150V N-Ch 0.110 Ohm UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75831SK8 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET |
| HUFA75831SK8T | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75842P3 | 功能描述:MOSFET 43a 150V 0.042 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75842S3S | 功能描述:MOSFET 43a 150V 0.042 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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