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參數資料
| 型號： | HUFA76404DK8T |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Dual MOSFET |
| 中文描述： | 3.6 A, 62 V, 0.11 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 652K |
| 代理商： | HUFA76404DK8T |
April 2005
2005 Fairchild Semiconductor Corporation
HUFA76404DK8T Rev. B
www.fairchildsemi.com
1
H
HUFA76404DK8T
N-Channel Dual MOSFET
62V, 3.2A, 132m
Features
r
DS(ON)
= 110m
(Typ.), V
GS
= 5V, I
D
= 3.2A
Q
g(tot)
= 3.8nC (Typ.), V
GS
= 5V
Low Miller Charge
Low Q
RR
Body Diode
Optimized efficiency at high frequencies
UIS Capability (Single Pulse and Repetitive Pulse)
Internal R
G
= 100
Qualified to AEC Q101
Applications
Motor / Body Load Control
ABS Systems
Powertrain Management
Injection Systems
DC-DC converters and Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 12V and 24V systems
SO-8
Branding Dash
1
5
2
3
4
DRAIN 1 (8)
SOURCE 1
(1)
DRAIN 1 (7)
DRAIN 2 (6)
DRAIN 2 (5)
SOURCE 2 (3)
GATE 2 (4)
GATE 1 (2)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HUFA76404DK8T_SB82047 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUFA76407D3 | 功能描述:MOSFET 11a 60V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76407D3S | 功能描述:MOSFET 11a 60V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76407D3ST | 功能描述:MOSFET 11a 60V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76407DK8 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET |
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