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參數資料
型號: HX6228AENT
廠商: Honeywell International Inc.
英文描述: 128K x 8 STATIC RAM-SOI HX6228
中文描述: 128K的× 8靜態RAM的絕緣硅HX6228
文件頁數: 2/12頁
文件大小: 153K
代理商: HX6228AENT
HX6228
2
FUNCTIONAL DIAGRAM
CE
NCS
NWE
NOE
MODE
DQ
H
L
H
L
Read
Data Out
H
L
L
X
Write
Data In
X
H
XX
XX
Deselected
High Z
L
X
XX
XX
Disabled
High Z
TRUTH TABLE
SIGNAL DEFINITIONS
A: 0-16
Address input pins which select a particular eight-bit word within the memory array.
DQ: 0-7
Bidirectional data pins which serve as data outputs during a read operation and as data inputs during a write
operation.
NCS
Not chip select, when at a low level allows normal operation. When at a high level NCS forces the SRAM to
a precharge condition, holds the data output drivers in a high impedance state and disables all the input
buffers except CE. If this signal is not used it must be connected to VSS.
NWE
Negative write enable, when at a low level activates a write operation and holds the data output drivers in
a high impedance state. When at a high level NWE allows normal read operation.
NOE
Negative output enable, when at a high level holds the data output drivers in a high impedance state. When
at a low level, the data output driver state is defined by NCS, NWE and CE. If this signal is not used it must
be connected to VSS.
CE
Chip enable, when at a high level allows normal operation. When at a low level CE forces the SRAM to a
precharge condition, holds the data output drivers in a high impedance state and disables all the input buffers
except the NCS input buffer. If this signal is not used it must be connected to VDD.
Notes:
X: VI=VIH or VIL
XX: VSS
VI
VDD
NOE=H: High Z output state maintained
for NCS=X, CE=X, NWE=X
NCS
A:3-7,12,14-16
CE
NWE
NOE
WE CS CE
NWE CS CE OE
(0 = high Z)
Column Decoder
Data Input/Output
Row
Decoder
131,072 x 8
Memory
Array
A:0-2, 8-11, 13
#
Signal
All controls must be
enabled for a signal to
pass. (#: number of
buffers, default = 1)
1 = enabled
Signal
8
DQ:0-7
8
8
9
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相關代理商/技術參數
參數描述
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