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參數資料
| 型號： | HX6228ASRT |
| 廠商： | Honeywell International Inc. |
| 英文描述： | 128K x 8 STATIC RAM-SOI HX6228 |
| 中文描述： | 128K的× 8靜態RAM的絕緣硅HX6228 |
| 文件頁數： | 5/12頁 |
| 文件大小： | 153K |
| 代理商： | HX6228ASRT |
HX6228
5
DC ELECTRICAL CHARACTERISTICS
IDDSB
Static Supply Current
0.4
2.0
mA
IDDSBMF Standby Supply Current - Deselected
0.4
2.0
mA
IDDOPW
Dynamic Supply Current, Selected
(Write)
4.5
6.0
mA
IDDOPR
Dynamic Supply Current, Selected
(Read)
2.8
4.5
mA
II
Input Leakage Current
-5
+5
μ
A
μ
A
IOZ
Output Leakage Current
-10
+10
VIL
Low-Level Input Voltage
VIH
High-Level Input Voltage
Units
Test Conditions
Min
Max
Worst Case
(2)
Symbol
Parameter
Typical
(1)
NCS=VDD, IO=0,
f=40 MHz,
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (3)
VIH=VDD, IO=0,
VIL=VSS, f=0MHz
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (3)
VSS
≤
VI
≤
VDD
VSS
≤
VIO
≤
VDD
Output=high Z
CMOS
TTL
3.2
0.7xV
DD
2.2
V
V
March Pattern
VDD = 5.5V
0.3
0.005
0.4
0.1
V
V
VDD = 4.5V, IOL = 10 mA
VDD = 4.5V, IOL = 200
μ
A
4.3
4.5
4.2
V
V
VDD = 4.5V, IOH = -5 mA
VDD = 4.5V, IOH = -200
μ
A
V
DD
-0.1
CMOS
TTL
1.7
0.3xV
DD
0.8
V
V
March Pattern
VDD = 4.5V
VOL
Low-Level Output Voltage
VOH
High-Level Output Voltage
(1) Typical operating conditions: VDD= 5.0 V,TA=25
°
C, pre-radiation.
(2) Worst case operating conditions: VDD=4.5 V to 5.5 V, -55
°
C to +125
°
C, post total dose at 25
°
C.
(3) All inputs switching. DC average current.
DUT
output
Valid low
output
Vref1
CL>50 pF*
249
Tester Equivalent Load Circuit
2.9 V
Valid high
output
Vref2
-
+
-
+
*CL = 5 pF for TWLQZ, TSHQZ, TELQZ, and TGHQZ
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相關代理商/技術參數 |
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|---|---|
| HX6228AVFC | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:128K x 8 STATIC RAM-SOI HX6228 |
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| HX6228AVHT | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:128K x 8 STATIC RAM-SOI HX6228 |
| HX6228AVNC | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:128K x 8 STATIC RAM-SOI HX6228 |
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