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參數資料
| 型號： | HX6228AVFC |
| 廠商： | Honeywell International Inc. |
| 英文描述： | 128K x 8 STATIC RAM-SOI HX6228 |
| 中文描述： | 128K的× 8靜態RAM的絕緣硅HX6228 |
| 文件頁數： | 9/12頁 |
| 文件大小： | 153K |
| 代理商： | HX6228AVFC |
HX6228
9
TESTER AC TIMING CHARACTERISTICS
QUALITY AND RADIATIONHARDNESS
ASSURANCE
Honeywell maintains a high level of product integrity through
process control, utilizing statistical process control, a com-
plete “Total Quality Assurance System,” a computer data
base process performance tracking system, and a radia-
tion hardness assurance strategy.
The radiation hardness assurance strategy starts with a
technology that is resistant to the effects of radiation.
Radiation hardness is assured on every wafer by irradiat-
ing test structures as well as SRAM product, and then
monitoring key parameters which are sensitive to ionizing
radiation. Conventional MIL-STD-883 TM 5005 Group E
testing, which includes total dose exposure with Cobalt 60,
may also be performed as required. This Total Quality
approach ensures our customers of a reliable product by
engineering in reliability, starting with process develop-
ment and continuing through product qualification and
screening.
SCREENING LEVELS
Honeywell offers several levels of device screening to
meet your system needs. “Engineering Devices” are avail-
able with limited performance and screening for bread-
boarding and/or evaluation testing. Hi-Rel Level B and S
devices undergo additional screening per the require-
ments of MIL-STD-883. As a QML supplier, Honeywell
also offers QML Class Q and V devices per MIL-PRF-
38535 and are available per the applicable Standard
Microcircuits Drawing (SMD). QML devices offer ease of
procurement by eliminating the need to create detailed
specifications and offer benefits of improved quality and
cost savings through standardization.
RELIABILITY
Honeywell understands the stringent reliability require-
ments that space and defense systems require and has
extensive experience in reliability testing on programs of
this nature. This experience is derived from comprehen-
sive testing of VLSI processes. Reliability attributes of the
RICMOS process were characterized by testing spe-
cially designed irradiated and non-irradiated test struc-
tures from which specific failure mechanisms were evalu-
ated. These specific mechanisms included, but were not
limited to, hot carriers, electromigration and time depend-
ent dielectric breakdown. This data was then used to make
changes to the design models and process to ensure more
reliable products.
In addition, the reliability of the RICMOS process and
product in a military environment was monitored by testing
irradiated and non-irradiated circuits in accelerated dy-
namic life test conditions. Packages are qualified for prod-
uct use after undergoing Groups B & D testing as outlined
in MIL-STD-883, TM 5005, Class S. The product is quali-
fied by following a screening and testing flow to meet the
customer’s requirements. Quality conformance testing is
performed as an option on all production lots to ensure the
ongoing reliability of the product.
High Z = 2.9V
3 V
0 V
1.5 V
VDD-0.5 V
0.5 V
VDD/2
1.5 V
VDD-0.4V
0.4 V
High Z
3.4 V
2.4 V
High Z
VDD/2
0.4 V
High Z
3.4 V
2.4 V
High Z
TTL I/O Configuration
Input
Levels*
Output
Sense
Levels
CMOS I/O Configuration
High Z = 2.9V
* Input rise and fall times <1 ns/V
VDD-0.4V
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| HX6228AVFT | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:128K x 8 STATIC RAM-SOI HX6228 |
| HX6228AVHC | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:128K x 8 STATIC RAM-SOI HX6228 |
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| HX6228AVNT | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:128K x 8 STATIC RAM-SOI HX6228 |
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