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參數資料
| 型號： | HX6228KSRT |
| 廠商： | Honeywell International Inc. |
| 英文描述： | 128K x 8 STATIC RAM-SOI HX6228 |
| 中文描述： | 128K的× 8靜態RAM的絕緣硅HX6228 |
| 文件頁數： | 3/12頁 |
| 文件大小： | 153K |
| 代理商： | HX6228KSRT |
HX6228
3
Total Dose
≥
1x10
6
rad(SiO
2
)
rad(Si)/s
Transient Dose Rate Upset (3)
≥
1x10
11
≥
1x10
12
Transient Dose Rate Survivability
rad(Si)/s
Soft Error Rate
<1x10
-10
upsets/bit-day
Neutron Fluence
≥
1x10
14
N/cm
2
Parameter
Limits (2)
Test Conditions
RADIATION HARDNESS RATINGS (1)
The SRAM will meet any functional or electrical specifica-
tion after exposure to a radiation pulse up to the transient
dose survivability specification,when applied under recom-
mended operating conditions. Note that the current con-
ducted during the pulse by the RAM inputs, outputs, and
power supply may significantly exceed the normal operat-
ing levels. The application design must accommodate
these effects.
Neutron Radiation
The SRAM will meet any functional or timing specification
after exposure to the specified neutron fluence under
recommended operating or storage conditions. This as-
sumes an equivalent neutron energy of 1 MeV.
Soft Error Rate
The SRAM is capable of meeting the specified Soft Error
Rate (SER), under recommended operating conditions.
This hardness level is defined by the Adams 90% worst
case cosmic ray environment for geosynchronous orbits.
Latchup
The SRAM will not latch up due to any of the above radiation
exposure conditions when applied under recommended
operating conditions. Fabrication with the SIMOX sub-
strate material provides oxide isolation between adjacent
PMOS and NMOS transistors and eliminates any potential
SCR latchup structures. Sufficient transistor body tie con-
nections to the p- and n-channel substrates are made to
ensure no source/drain snapback occurs.
Total Ionizing Radiation Dose
The SRAM will meet all stated functional and electrical
specifications over the entire operating temperature range
after the specified total ionizing radiation dose. All electrical
and timing performance parameters will remain within
specifications after rebound at VDD = 5.5 V and T =125
°
C
extrapolated to ten years of operation. Total dose hardness
is assured by wafer level testing of process monitor transis-
tors and RAM product using 10 KeV X-ray and Co60
radiation sources. Transistor gate threshold shift correla-
tions have been made between 10 KeV X-rays applied at
a dose rate of 1x10
5
rad(SiO
)/min at T = 25
°
C and gamma
rays (Cobalt 60 source) to ensure that wafer level X-ray
testing is consistent with standard military radiation test
environments.
Transient Pulse Ionizing Radiation
The SRAM is capable of writing, reading, and retaining
stored data during and after exposure to a transient ionizing
radiation pulse up to the specified transient dost rate upset
specification, when applied under recommended operat-
ing conditions. To ensure validity of all specified perfor-
mance parameters before, during, and after radiation (tim-
ing degradation during transient pulse radiation is
≤
20%),
it is suggested that stiffening capacitance be placed on or
near the package VDD and VSS, with a maximum induc-
tance between the package (chip) and stiffening capaci-
tance of 0.7 nH per part. If there are no operate-through or
valid stored data requirements, typical circuit board
mounted de-coupling capacitors are recommended.
Units
(1) Device will not latch up due to any of the specified radiation exposure conditions.
(2) Operating conditions (unless otherwise specified): VDD=4.5 V to 5.5 V, -55
°
C to 125
°
C.
(3) Applies to 40-lead flat pack only. Assume
≥
1x100
9
rad(Si))/s for 32-lead flat pack. Stiffening capacitance is suggested for optimum expected
dose rate upset performance as stated above.
T
=125
°
C, Adams 90%
worst case environment
1 MeV equivalent energy,
Unbiased, T
A
=25
°
C
Pulse width
≤
50 ns, X-ray,
VDD=6.0 V, T
A
=25
°
C
Pulse width
≤
1
μ
s
T
A
=25
°
C
RADIATION CHARACTERISTICS
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