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參數資料
| 型號： | HY229F800BT-70 |
| 元件分類： | EEPROM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁數： | 1/40頁 |
| 文件大小： | 310K |
| 代理商： | HY229F800BT-70 |
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KEY FEATURES
n
5 Volt Read, Program, and Erase
– Minimizes system-level power requirements
n
High Performance
– Access times as fast as 55 ns
n
Low Power Consumption
– 20 mA typical active read current in byte
mode, 28 mA typical in word mode
– 35 mA typical program/erase current
– 5 μA maximum CMOS standby current
n
Compatible with JEDEC Standards
– Package, pinout and command-set
compatible with the single-supply Flash
device standard
– Provides superior inadvertent write
protection
n
Sector Erase Architecture
– Boot sector architecture with top and
bottom boot block options available
– One 16 Kbyte, two 8 Kbyte, one 32 Kbyte
and fifteen 64 Kbyte sectors in byte mode
– One 8 Kword, two 4 Kword, one 16 Kword
and fifteen 32 Kword sectors in word mode
– A command can erase any combination of
sectors
– Supports full chip erase
n
Erase Suspend/Resume
– Temporarily suspends a sector erase
operation to allow data to be read from, or
programmed into, any sector not being
erased
n
Sector Protection
– Any combination of sectors may be
locked to prevent program or erase
operations within those sectors
n
Temporary Sector Unprotect
– Allows changes in locked sectors
(requires high voltage on RESET# pin)
n
Internal Erase Algorithm
– Automatically erases a sector, any
combination of sectors, or the entire chip
n
Internal Programming Algorithm
– Automatically programs and verifies data
at a specified address
n
Fast Program and Erase Times
– Byte programming time: 7 μs typical
– Sector erase time: 1.0 sec typical
– Chip erase time: 19 sec typical
n
Data# Polling and Toggle Status Bits
– Provide software confirmation of
completion of program or erase
operations
n
Ready/Busy# Output (RY/BY#)
– Provides hardware confirmation of
completion of program and erase
operations
n
Minimum 100,000 Program/Erase Cycles
n
Space Efficient Packaging
– Available in industry-standard 44-pin
PSOP and 48-pin TSOP and reverse
TSOP packages
Revision 4.0, January 2000
GENERAL DESCRIPTION
The HY29F800 is an 8 Megabit, 5 volt only CMOS
Flash memory organized as 1,048,576 (1M) bytes
or 524,288 (512K) words. The device is offered in
industry-standard 44-pin PSOP and 48-pin TSOP
packages.
The HY29F800 can be programmed and erased
in-system with a single 5-volt V
CC
supply. Inter-
nally generated and regulated voltages are pro-
vided for program and erase operations, so that
the device does not require a high voltage power
supply to perform those functions. The device can
also be programmed in standard EPROM pro-
grammers. Access times as fast as 70ns over the
full operating voltage range of 5.0 volts ± 10% are
offered for timing compatibility with the zero wait
state requirements of high speed microprocessors.
A[18:0]
19
CE#
OE#
RESET#
BYTE#
WE#
8
7
DQ[7:0]
DQ[14:8]
DQ[15]/A-1
RY/BY#
LOGIC DIAGRAM
HY29F800
8 Megabit (1M x 8/512K x 16), 5 Volt-only, Flash Memory
相關PDF資料 |
PDF描述 |
|---|---|
| HY229F800BT-70I | EEPROM |
| HY229F800BT-90 | EEPROM |
| HY229F800BT-90I | EEPROM |
| HY29F800BG-55I | x8/x16 Flash EEPROM |
| HY29F800BG-70E | x8/x16 Flash EEPROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY229F800BT-70I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| HY229F800BT-90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| HY229F800BT-90I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| HY229F800TG-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| HY229F800TG-12I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
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