欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號： HY27LF081G2M-VPEB
廠商： Hynix Semiconductor Inc.
英文描述： 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
中文描述： 1Gbit的（128Mx8bit / 64Mx16bit）NAND閃存
文件頁數(shù)： 1/48頁
文件大小： 476K
代理商： HY27LF081G2M-VPEB
Rev 0.7 / Apr. 2005
1
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Document Title
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
Revision History
Revision
No.
History
Draft Date
Remark
0.0
1) Initial Draft.
Aug. 2004
Preliminary
0.1
1) Correct Fig.10 Sequential out cycle after read
2) Add the text to Fig.1, Table.1, Table.2
- text : IO15 - IO8 (x16 only)
3) Delete ‘3.2 Page program NOTE 1.
- Note : if possible it is better to remove this constrain
4) Change the text ( page 10,13, 45)
- 2.2 Address Input : 28 Addresses -> 27 Addresses
- 3.7 Reset : Fig.29 -> Fig.30
- 5.1 Automatic page read after power up : Fig.30 -> Fig.29
5) Add 5.3 Addressing for program operation & Fig.34
1) Change TSOP, WSOP, FBGA package dimension & figures.
- Change TSOP, WSOP, FBGA package mechanical data
- Change FBGA thickness (1.2 -> 1.0 mm)
2) Correct TSOP, WSOP Pin configurations.
- 38th NC pin has been changed Lockpre
(figure 3,4)
3) Edit figure 15,19 & table 4
4) Add Bad Block Management
5) Change Device Identifier 3rd Byte
- 3rd Byte ID is changed. (reserved -> don't care)
- 3rd Byte ID table is deleted.
1) Add Errata
Sep. 2004
Preliminary
0.2
Oct. 2004
Preliminary
0.3
2) LOCKPRE is changed to PRE.
- Texts, Table, Figures are changed.
3) Add Note.4 (table.14)
4) Block Lock Mechanism is deleted.
- Texts, Table, figures are deleted.
5) Add Application Note(Power-On/Off Sequence & Auto Sleep mode.)
- Texts & Figures are added.
6) Edit the figures. (#10~25)
1) Change AC characteristics(tREH)
before: 20ns -> after: 30ns
2) Edit Note.1 (page. 21)
3) Edit the Application note 1,2
4) Edit The Address cycle map (x8, x16)
Nov.29 2004
Preliminary
0.4
Jan.19 2005
Preliminary
tCLS
tCLH
tWP
tALS
tALH
tDS
tWC
tR
Specification
0
10
25
0
10
20
50
25
Relaxed value
5
15
40
5
15
25
60
27
相關PDF資料
PDF描述
HY27SF081G2M-VPEB 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF161G2M-VPEB 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27LF161G2M-VPEB 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF161G2M-VPEB 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-VPEP 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
HY27LF081G2M-VPEP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27LF081G2M-VPES 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27LF081G2M-VPIB 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27LF081G2M-VPIP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27LF081G2M-VPIS 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*
主站蜘蛛池模板： 永兴县| 贺兰县| 行唐县| 镇坪县| 承德县| 齐齐哈尔市| 柳江县| 平昌县| 莱西市| 松江区| 嘉峪关市| 施秉县| 高青县| 积石山| 邵阳县| 塔河县| 巴东县| 山东| 台安县| 衡山县| 泾源县| 西吉县| 北辰区| 二连浩特市| 伊宁县| 德钦县| 普兰县| 黄浦区| 宣化县| 兰坪| 广南县| 边坝县| 梓潼县| 石首市| 岚皋县| 宜阳县| 锡林浩特市| 治多县| 衡东县| 扶风县| 宁国市|