欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào)： HY27UF081G2M-VPMS
廠商： Hynix Semiconductor Inc.
英文描述： 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
中文描述： 1Gbit的（128Mx8bit / 64Mx16bit）NAND閃存
文件頁數(shù)： 1/48頁
文件大小： 476K
代理商： HY27UF081G2M-VPMS
Rev 0.7 / Apr. 2005
1
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Document Title
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
Revision History
Revision
No.
History
Draft Date
Remark
0.0
1) Initial Draft.
Aug. 2004
Preliminary
0.1
1) Correct Fig.10 Sequential out cycle after read
2) Add the text to Fig.1, Table.1, Table.2
- text : IO15 - IO8 (x16 only)
3) Delete ‘3.2 Page program NOTE 1.
- Note : if possible it is better to remove this constrain
4) Change the text ( page 10,13, 45)
- 2.2 Address Input : 28 Addresses -> 27 Addresses
- 3.7 Reset : Fig.29 -> Fig.30
- 5.1 Automatic page read after power up : Fig.30 -> Fig.29
5) Add 5.3 Addressing for program operation & Fig.34
1) Change TSOP, WSOP, FBGA package dimension & figures.
- Change TSOP, WSOP, FBGA package mechanical data
- Change FBGA thickness (1.2 -> 1.0 mm)
2) Correct TSOP, WSOP Pin configurations.
- 38th NC pin has been changed Lockpre
(figure 3,4)
3) Edit figure 15,19 & table 4
4) Add Bad Block Management
5) Change Device Identifier 3rd Byte
- 3rd Byte ID is changed. (reserved -> don't care)
- 3rd Byte ID table is deleted.
1) Add Errata
Sep. 2004
Preliminary
0.2
Oct. 2004
Preliminary
0.3
2) LOCKPRE is changed to PRE.
- Texts, Table, Figures are changed.
3) Add Note.4 (table.14)
4) Block Lock Mechanism is deleted.
- Texts, Table, figures are deleted.
5) Add Application Note(Power-On/Off Sequence & Auto Sleep mode.)
- Texts & Figures are added.
6) Edit the figures. (#10~25)
1) Change AC characteristics(tREH)
before: 20ns -> after: 30ns
2) Edit Note.1 (page. 21)
3) Edit the Application note 1,2
4) Edit The Address cycle map (x8, x16)
Nov.29 2004
Preliminary
0.4
Jan.19 2005
Preliminary
tCLS
tCLH
tWP
tALS
tALH
tDS
tWC
tR
Specification
0
10
25
0
10
20
50
25
Relaxed value
5
15
40
5
15
25
60
27
相關(guān)PDF資料
PDF描述
HY27UF161G2M 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF161G2M-FP 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF161G2M-TCB 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF161G2M-TCP 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF161G2M-TCS 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY27UF082G2A 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2Gbit (256Mx8bit/128Mx16bit) NAND Flash
HY27UF082G2A-T(P) 制造商:SK Hynix Inc 功能描述:
HY27UF082G2A-TPCB 制造商:Hynix 功能描述:FLASH NAND 2GB TSOP 3V 制造商:SK Hynix Inc 功能描述:FLASH NAND 2GB TSOP 3V
HY27UF082G2B 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2Gb NAND FLASH
HY27UF082G2B-TPCB 制造商:SK Hynix Inc 功能描述:IC MEMORY 2GB FLASH NAND 48TSOP 制造商:SK Hynix Inc 功能描述:IC, MEMORY, 2GB FLASH NAND, 48TSOP 制造商:SK Hynix Inc 功能描述:IC, MEMORY, 2GB FLASH NAND, 48TSOP, Memory Type:Flash - NAND, Memory Size:2GB, M 制造商:SK Hynix Inc 功能描述:IC, FLASH MEM, 2GB, 20NS, 48-TSOP, Memory Type:Flash - NAND, Memory Size:2048Mbit, Memory Configuration:256M x 8, Supply Voltage Min:2.7V, Supply Voltage Max:3.6V, Memory Case Style:TSOP, No. of Pins:48, Access Time:20ns, MSL:- , RoHS Compliant: Yes
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*
主站蜘蛛池模板： 敦化市| 宜宾市| 灵石县| 手游| 桓台县| 嘉祥县| 宿州市| 巴彦淖尔市| 华蓥市| 乐陵市| 塘沽区| 浪卡子县| 台山市| 大安市| 潞西市| 乐陵市| 延川县| 灵璧县| 上蔡县| 西藏| 集安市| 马尔康县| 塘沽区| 宜春市| 汶川县| 景洪市| 东丽区| 尼勒克县| 怀来县| 奉化市| 松阳县| 乐平市| 临沂市| 瑞安市| 大冶市| 黄浦区| 新巴尔虎左旗| 临武县| 新化县| 五河县| 泸水县|