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參數資料
| 型號： | HY29DS163 |
| 英文描述： | 16M(X8/X16)|2.0V DUAL BANK|120|NOR FLASH - 16M |
| 中文描述： | 1,600（X8/X16）| 2.0V的雙銀行| 120 | NOR閃存- 1,600 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 286K |
| 代理商： | HY29DS163 |
Product Brief
May 2001
A[20:0]
21
CE#
OE#
BYTE#
WE#
15
DQ[14:0]
DQ[15]/A[-1]
RESET#
RY/BY#
WP#/ACC
LOGIC DIAGRAM
HY29DS322/HY29DS323
32 Megabit (4M x 8/2M x16) Super-Low Voltage,
Dual Bank, Simultaneous Read/Write, Flash Memory
KEY FEATURES
Single Power Supply Operation
Read, program, and erase operations
from 1.8 to 2.2 V (2.0V ± 10%)
Ideal for battery-powered applications
Simultaneous Read/Write Operations
Host system can program or erase in one
bank while simultaneously reading from any
sector in the other bank with zero latency
between read and write operations
High Performance
100, 110 and 120 ns access time versions
Ultra Low Power Consumption (Typical
Values)
Automatic sleep mode current: 5 μA
Standby mode current: 5 μA
Read current: 5 mA (at 5 MHz)
Program/erase current: 20 mA
Boot-Block Sector Architecture with 71
Sectors in Two Banks for Fast In-System
Code Changes
Secured Sector: An Extra 64 Kbyte Sector
that Can Be:
Factory locked and identifiable: 16 bytes
available for a secure, random factory
Electronic Serial Number
Customer lockable: Can be read, program-
med, or erased just like other sectors
Flexible Sector Architecture
Sector Protection allows locking of a
sector or sectors to prevent program or
erase operations within that sector
Temporary Sector Unprotect allows
changes in locked sectors (requires high
voltage on RESET# pin)
Automatic Erase Algorithm Erases Any
Combination of Sectors or the Entire Chip
Automatic Program Algorithm Writes and
Verifies Data at Specified Addresses
Compliant with Common Flash Memory
Interface (CFI) Specification
Minimum 100,000 Write Cycles per Byte/
Word
Compatible with JEDEC Standards
Pinout and software compatible with
single-power supply Flash devices
Superior inadvertent write protection
Data# Polling and Toggle Bits
Provide software confirmation of completion
of program or erase operations
Ready/Busy# Pin
Provides hardware confirmation of
completion of program or erase operations
Erase Suspend
Suspends an erase operation to allow
programming data to or reading data from
a sector in the same bank
Erase Resume can then be invoked to
complete the suspended erasure
Hardware Reset Pin (RESET#) Resets the
Device to Reading Array Data
WP#/ACC Input Pin
Write protect (WP#) function allows
hardware protection of two outermost boot
sectors, regardless of sector protect status
Acceleration (ACC) function provides
accelerated program times
Fast Program and Erase Times
Sector erase time: 2 sec typical
Byte/Word program time utilizing
Acceleration function: 10 μs typical
Space Efficient Packaging
48-pin TSOP and 48-ball FBGA
packages
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| HY29DS322BF-12 | EEPROM |
| HY29DS322BT-10 | EEPROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY29DS163BF-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory |
| HY29DS163BF-12I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory |
| HY29DS163BF-13 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory |
| HY29DS163BF-13I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory |
| HY29DS163BT-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory |
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