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參數資料
| 型號： | HY29F002BP-55I |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | PROM |
| 英文描述： | 256K X 16 FLASH 5V PROM, 55 ns, PDIP32 |
| 封裝： | PLASTIC, DIP-32 |
| 文件頁數： | 1/40頁 |
| 文件大小： | 457K |
| 代理商： | HY29F002BP-55I |
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KEY FEATURES
n
n 5 Volt Read, Program, and Erase
– Minimizes system-level power requirements
n
n High Performance
– Access times as fast as 45 ns
n
n Low Power Consumption
– 20 mA typical active read current
– 30 mA typical program/erase current
– 1 A typical CMOS standby current
n
n Compatible with JEDEC Standards
– Package, pinout and command-set
compatible with the single-supply Flash
device standard
– Provides superior inadvertent write
protection
n
n Sector Erase Architecture
– Boot sector architecture with top and
bottom boot block options available
– One 16 Kbyte, two 8 Kbyte, one 32 Kbyte
and three 64K byte sectors
– A command can erase any combination of
sectors
– Supports full chip erase
n
n Erase Suspend/Resume
– Temporarily suspends a sector erase
operation to allow data to be read from, or
programmed into, any sector not being
erased
n
n Sector Protection
– Any combination of sectors may be
locked to prevent program or erase
operations within those sectors
n
n Temporary Sector Unprotect
– Allows changes in locked sectors
(requires high voltage on RESET# pin)
n
n Internal Erase Algorithm
– Automatically erases a sector, any
combination of sectors, or the entire chip
n
n Internal Programming Algorithm
– Automatically programs and verifies data
at a specified address
n
n Fast Program and Erase Times
– Byte programming time: 7 s typical
– Sector erase time: 1.0 sec typical
– Chip erase time: 7 sec typical
n
n Data# Polling and Toggle Status Bits
– Provide software confirmation of
completion of program or erase
operations
n
n Minimum 100,000 Program/Erase Cycles
n
n Space Efficient Packaging
– Available in industry-standard 32-pin
PDIP, TSOP and PLCC packages
Preliminary
Revision 4, January 2000
GENERAL DESCRIPTION
The HY29F002 is an 2 Megabit, 5 volt-only CMOS
Flash memory organized as 262,144 (256K) bytes.
The device is offered in industry-standard 32-pin
PDIP, TSOP and PLCC packages.
The HY29F002 can be programmed and erased
in-system with a single 5-volt V
CC supply. Inter-
nally generated and regulated voltages are pro-
vided for program and erase operations, so that
the device does not require a high voltage power
supply to perform those functions. The device can
also be programmed in standard EPROM pro-
grammers. Access times as fast as 55ns over the
full operating voltage range of 5.0 volts ± 10% are
offered for timing compatibility with the zero wait
state requirements of high speed microprocessors.
A 45ns version operating over 5.0 volts ± 5% is
also available. To eliminate bus contention, the
A[17:0]
18
CE#
OE#
WE#
8
DQ[7:0]
RESET#
LOGIC DIAGRAM
HY29F002
2 Megabit (256K x 16), 5 Volt-only, Flash Memory
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相關代理商/技術參數 |
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|---|---|
| HY29F002BP-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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