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參數資料
| 型號： | HY29F002TT-45 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| 中文描述： | 256K X 8 FLASH 5V PROM, 45 ns, PDSO32 |
| 封裝： | TSOP-32 |
| 文件頁數： | 4/38頁 |
| 文件大?。?/td> | 381K |
| 代理商： | HY29F002TT-45 |
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Rev. 4.1/May 01
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SIGNAL DESCRIPTIONS
MEMORY ARRAY ORGANIZATION
The 256 Kbyte Flash memory array is organized
into seven blocks called
sectors
(S0, S1, . . . ,
S6). A sector is the smallest unit that can be
erased and which can be protected to prevent
accidental or unauthorized erasure. See the
‘
Bus
Operations
’
and
‘
Command Definitions
’
sections
of this document for additional information on these
functions.
Table 1. HY29F002T Memory Array Organization
In the HY29F002T, four of the sectors, which com-
prise the
boot block
, vary in size from 8 to 32
Kbytes, while the remaining three sectors are
uniformly sized at 64 Kbytes. In this device, the
boot block is located at the top of the address
range.
Table 1 defines the sector addresses and corre-
sponding address ranges for the HY29F002T.
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相關PDF資料 |
PDF描述 |
|---|---|
| HY29F002TT-55 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F002TT-70 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F002TT-90 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F040A | 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
| HY29F080T70 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY29F002TT-45E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F002TT-45I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F002TT-55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F002TT-55E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F002TT-55I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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