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參數資料
型號: HY29F080
廠商: Hynix Semiconductor Inc.
英文描述: 8 Megabit (1M x 8), 5 Volt-only, Flash Memory
中文描述: 8兆位(1米× 8),5伏只,閃存
文件頁數: 34/38頁
文件大小: 366K
代理商: HY29F080
34
Rev. 6.1/May 01
HY29F080
AC CHARACTERISTICS
0x555 for Program
0x2AA for Erase
PA for Program
SA for Sector Erase
0x555 for Chip Erase
t
WS
t
RH
t
WH
CE#
OE#
Addresses
t
WC
VA
t
AS
t
AH
WE#
Data
RY/BY#
t
DS
Status
D
OUT
t
BUSY
t
WHWH1
or t
WHWH2
or t
WHWH3
t
DH
0xA0 for Program
0x55 for Erase
PD for Program
0x30 for Sector Erase
0x10 for Chip Erase
RESET#
t
CP
t
CPH
t
GHEL
Notes:
1.
PA = program address, PD = program data, VA = Valid Address for reading program or erase status (see Write
Operation Status section), D
OUT
= array data read at VA.
Illustration shows the last two cycles of the program or erase command sequence and the last status read cycle.
Word mode addressing shown.
RESET# shown only to illustrate t
RH
measurement references. It cannot occur as shown during a valid
command sequence.
Figure 23. Alternate CE# Controlled Write Operation Timings
2.
3.
4.
相關PDF資料
PDF描述
HY29F080G12 8 Megabit (1M x 8), 5 Volt-only, Flash Memory
HY29F080G70 8 Megabit (1M x 8), 5 Volt-only, Flash Memory
HY29F080G90 8 Megabit (1M x 8), 5 Volt-only, Flash Memory
HY29F080R12 8 Megabit (1M x 8), 5 Volt-only, Flash Memory
HY29F080R70 8 Megabit (1M x 8), 5 Volt-only, Flash Memory
相關代理商/技術參數
參數描述
HY29F080G12 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1M x 8), 5 Volt-only, Flash Memory
HY29F080G-12 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8 Flash EEPROM
HY29F080G-12E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
HY29F080G-15 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
HY29F080G-15E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
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