- 您現在的位置：買賣IC網 > PDF目錄385414 > HY29F080G-90 (HYNIX SEMICONDUCTOR INC) x8 Flash EEPROM PDF資料下載
參數資料
| 型號： | HY29F080G-90 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | x8 Flash EEPROM |
| 中文描述： | 1M X 8 FLASH 5V PROM, 90 ns, PDSO44 |
| 封裝： | PLASTIC, SOP-44 |
| 文件頁數： | 10/38頁 |
| 文件大小： | 366K |
| 代理商： | HY29F080G-90 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁當前第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁
10
Rev. 6.1/May 01
HY29F080
DEVICE COMMANDS
Device operations are initiated by writing desig-
nated address and data
command sequences
into
the device. A command sequence is composed
of one, two or three of the following sub-segments:
an
unlock cycle
, a
command cycle
and a
data
cycle
. Table 4 summarizes the composition of the
valid command sequences implemented in the
HY29F080, and these sequences are fully de-
scribed in Table 5 and in the sections that follow.
Writing incorrect address and data values or writ-
ing them in the improper sequence resets the
HY29F080 to the Read mode.
Table 4. Composition of Command Sequences
Notes:
1. Any number of Flash array read cycles are permitted.
2. Additional data cycles may follow. See text.
3. Any number of Electronic ID read cycles are permitted.
Read/Reset 1, 2 Commands
The HY29F080 automatically enters the Read
mode after device power-up, after the RESET#
input is asserted and upon the completion of cer-
tain commands. Read/Reset commands are not
required to retrieve data in these cases.
A Read/Reset command must be issued in order
to read array data in the following cases:
If the device is in the Electronic ID mode, a
Read/ Reset command must be written to re-
turn to the Read mode. If the device was in the
Erase Suspend mode when the device entered
the Electronic ID mode, writing the Read/Re-
set command returns the device to the Erase
Suspend mode.
Note:
When in the Electronic ID bus operation mode,
the device returns to the Read mode when V
is re-
moved from the A[9] pin. The Read/Reset command is
not required in this case.
If DQ[5] (Exceeded Time Limit) goes High dur-
ing a program or erase operation, writing the
reset command returns the sectors to the Read
mode (or to the Erase Suspend mode if the
device was in Erase Suspend).
The Read/Reset command may also be used to
abort certain command sequences:
In a Sector Erase or Chip Erase command se-
quence, the Read/Reset command may be
written at any time before erasing actually be-
gins, including, for the Sector Erase command,
between the cycles that specify the sectors to
be erased (see Sector Erase command de-
scription). This aborts the command and re-
sets the device to the Read mode. Once era-
sure begins, however, the device ignores Read/
Reset commands until the operation is com-
plete.
In a Program command sequence, the Read/
Reset command may be written between the
sequence cycles before programming actually
begins. This aborts the command and resets
the device to the Read mode, or to the Erase
Suspend mode if the Program command se-
quence is written while the device is in the
Erase Suspend mode. Once programming
begins, however, the device ignores Read/Re-
set commands until the operation is complete.
The Read/Reset command may be written be-
tween the cycles in an Electronic ID command
sequence to abort that command. As described
above, once in the Electronic ID mode, the
Read/ Reset command
must
be written to re-
turn to the Read mode.
Byte Program Command
The host processor programs the device a byte at
a time by issuing the Program command sequence
shown in Table 5. The sequence begins by writ-
ing two unlock cycles, followed by the Program
setup command and, lastly, a data cycle specify-
ing the program address and data. This initiates
the Automatic Programming algorithm, which pro-
vides internally generated program pulses and
d
e
n
c
a
n
m
e
u
m
q
o
e
C
S
s
e
y
C
s
u
B
f
o
r
e
b
m
u
N
k
c
o
U
d
n
a
m
m
o
C
a
t
D
1
2
m
e
t
s
e
R
s
e
R
r
o
r
P
r
E
p
C
/
a
e
R
a
e
R
e
B
0
2
2
4
1
1
1
1
1
1
e
N
e
N
t
/
a
1
1
s
a
e
s
a
r
E
r
e
S
4
1
)
e
N
(
1
d
n
e
p
s
u
S
e
s
a
r
E
0
1
0
e
m
u
s
e
R
e
s
a
r
E
0
1
0
D
I
c
o
r
e
2
1
3
e
N
相關PDF資料 |
PDF描述 |
|---|---|
| HY29F080R-12 | x8 Flash EEPROM |
| HY29F080R-70 | x8 Flash EEPROM |
| HY29F080R-90 | x8 Flash EEPROM |
| HY29F080T-12 | x8 Flash EEPROM |
| HY29F080T-70 | x8 Flash EEPROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY29F080G-90E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F080R12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080R-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8 Flash EEPROM |
| HY29F080R-12E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F080R-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
發布緊急采購，3分鐘左右您將得到回復。