- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄385414 > HY29F080R12 (Hynix Semiconductor Inc.) 8 Megabit (1M x 8), 5 Volt-only, Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | HY29F080R12 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| 中文描述： | 8兆位（1米× 8），5伏只，閃存 |
| 文件頁(yè)數(shù)： | 4/38頁(yè) |
| 文件大小： | 366K |
| 代理商： | HY29F080R12 |
第1頁(yè)第2頁(yè)第3頁(yè)當(dāng)前第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)
4
Rev. 6.1/May 01
HY29F080
CONVENTIONS
Unless otherwise noted, a positive logic (active
High) convention is assumed throughout this docu-
ment, whereby the presence at a pin of a higher,
more positive voltage (nominally 5VDC) causes
assertion of the signal. A
‘
#
’
symbol following the
signal name, e.g., RESET#, indicates that the sig-
nal is asserted in a Low state (nominally 0 volts).
Whenever a signal is separated into numbered
bits, e.g., DQ[7], DQ[6], ..., DQ[0], the family of
bits may also be shown collectively, e.g., as
DQ[7:0].
The designation 0xNNNN (N = 0, 1, 2, . . . , 9, A, .
. . , E, F) indicates a number expressed in hexa-
decimal notation. The designation 0bXXXX indi-
cates a number expressed in binary notation (X =
0, 1).
e
m
a
N
e
p
y
T
n
v
a
r
o
s
e
D
e
r
d
d
A
n
w
.
B
S
L
a
t
D
o
r
p
o
p
C
e
w
c
a
s
t
p
t
O
n
d
n
a
e
a
s
e
t
W
e
u
q
e
s
e
w
.
g
s
w
d
r
H
9
2
Y
H
n
m
r
m
m
o
c
e
d
e
h
d
a
e
R
r
o
r
W
l
n
y
v
a
y
a
r
t
v
r
w
o
P
]
1
A
s
p
n
.
e
r
g
H
r
e
,
s
h
s
e
e
b
h
)
M
s
A
1
(
6
d
n
7
5
4
B
S
M
0
e
f
h
e
n
o
t
1
A
e
s
.
n
s
p
n
o
r
p
o
y
e
w
t
e
e
w
s
e
h
r
T
d
a
s
a
y
a
e
]
Q
D
s
p
O
/
p
n
e
h
g
H
e
v
a
.
n
,
a
n
E
o
a
d
n
d
e
n
E
e
g
e
n
a
d
a
n
E
s
e
c
n
o
r
p
o
,
u
B
e
w
d
n
a
d
a
e
r
r
h
p
a
d
t
-
n
a
e
d
o
r
s
n
e
s
e
h
T
.
#
E
C
t
p
n
.
w
8
m
L
r
p
o
u
b
e
r
a
o
0
y
e
L
F
b
e
2
d
n
v
a
H
e
h
S
e
h
,
a
r
d
e
h
d
,
r
n
n
r
m
c
e
d
o
r
e
a
d
d
n
a
d
a
d
e
r
o
d
e
s
s
s
u
b
s
a
e
b
a
d
t
u
m
t
p
g
n
e
h
n
s
T
W
.
d
o
w
o
.
o
n
s
w
o
L
a
r
o
w
e
c
e
h
e
e
h
.
9
Y
a
v
a
e
w
a
d
v
a
r
d
k
a
#
E
O
t
p
n
s
e
n
o
r
p
o
c
e
d
.
o
c
r
o
s
r
y
m
e
m
w
o
L
s
#
E
C
d
e
a
e
h
e
d
n
r
r
r
a
d
e
p
m
i
m
m
o
c
h
f
e
w
d
e
s
p
o
h
f
s
e
d
e
s
s
a
e
b
a
d
g
e
h
g
n
w
s
e
s
a
r
s
a
s
t
u
,
n
m
g
d
e
s
r
o
r
a
d
E
W
n
e
h
t
p
e
h
c
a
n
W
e
C
s
T
.
n
r
s
.
m
r
e
m
c
n
a
e
o
s
n
#
E
W
t
p
n
d
A
#
n
a
m
.
a
d
n
a
m
o
s
e
E
O
#
#
T
E
S
E
R
t
p
n
.
w
.
y
a
r
o
r
n
n
o
r
p
o
e
w
d
e
r
n
g
a
S
e
h
n
e
b
.
u
t
t
S
n
m
o
c
n
e
e
b
s
a
h
m
o
c
a
f
e
s
p
a
d
g
n
m
m
a
r
o
.
d
.
p
u
s
r
w
o
p
r
g
l
n
g
d
n
a
o
L
e
r
v
a
a
e
r
,
s
e
R
h
o
y
n
a
e
r
l
w
y
s
r
#
E
r
e
0
8
0
F
e
n
a
c
B
/
s
s
e
r
e
h
g
n
s
e
m
m
i
e
r
a
s
#
T
E
S
E
R
r
f
d
,
s
e
d
o
h
m
s
e
e
r
c
e
d
s
s
u
b
.
e
s
w
d
r
h
e
h
a
d
s
a
a
n
s
e
h
e
h
T
s
p
n
.
d
o
m
h
w
s
e
c
.
e
e
s
d
n
a
m
n
a
r
r
e
d
o
r
P
y
e
w
/
a
e
s
s
t
d
r
W
d
e
e
,
n
a
e
e
W
.
s
e
s
s
e
u
e
y
h
b
d
n
d
#
Y
B
/
Y
R
t
r
D
p
O
n
e
p
n
O
n
e
s
d
a
e
s
d
f
c
e
d
o
y
d
a
e
n
e
a
g
m
d
e
e
m
g
h
r
o
c
e
n
e
w
s
s
a
e
r
e
h
w
o
L
h
w
r
o
e
w
d
v
m
e
r
g
s
e
o
g
a
r
e
#
h
B
/
Y
R
n
e
u
q
,
h
e
r
s
n
h
s
t
Y
.
c
n
a
r
n
e
d
V
C
C
V
S
S
-
-
.
n
u
o
SIGNAL DESCRIPTIONS
MEMORY ARRAY ORGANIZATION
The 1 MByte Flash memory array is organized into
sixteen 64 KByte blocks called
sectors
(S0, S1, . .
. , S15). A sector is the smallest unit that can be
erased. Adjacent pairs of sectors (S0/S1, S2/S3,
. . . , S14/S15) are designated as a
sector group
.
A sector group is the smallest unit which can be
protected to prevent accidental or unauthorized
erasure. See
‘
Bus Operations
’
and
‘
Command
Definitions
’
sections of this document for additional
information on these functions.
Table 1 defines the sector addresses, sector group
addresses and corresponding address ranges for
the HY29F080.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY29F080R70 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080R90 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080T12 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080G-12 | x8 Flash EEPROM |
| HY29F080T90 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29F080R-12 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:x8 Flash EEPROM |
| HY29F080R-12E | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 Flash EEPROM |
| HY29F080R-15 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 Flash EEPROM |
| HY29F080R-15E | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 Flash EEPROM |
| HY29F080R-15I | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 Flash EEPROM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。