- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄385415 > HY29F400BT45 (Hynix Semiconductor Inc.) 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | HY29F400BT45 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| 中文描述： | 4兆位（512Kx8/256Kx16）5伏只閃存 |
| 文件頁(yè)數(shù)： | 34/40頁(yè) |
| 文件大小： | 509K |
| 代理商： | HY29F400BT45 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)當(dāng)前第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)
34
Rev. 5.2/May 01
HY29F400
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
r
e
t
m
a
r
a
P
C
E
D
E
J
d
t
S
t
V
A
V
A
t
C
W
i
e
y
C
e
W
t
L
E
V
A
t
S
A
u
S
s
s
e
r
d
A
t
X
A
L
E
t
H
A
d
H
s
s
e
r
d
A
t
H
E
V
D
t
S
D
i
p
u
S
a
D
t
X
D
H
E
t
H
D
m
i
d
H
a
D
t
L
E
H
G
t
L
E
H
G
y
v
o
c
e
R
d
a
e
R
t
L
E
L
W
t
S
W
i
p
u
S
#
E
W
t
H
W
H
E
t
H
W
i
d
H
#
E
W
t
H
E
L
E
t
P
C
W
e
s
P
#
E
C
t
L
E
H
E
t
H
P
C
W
e
s
P
#
E
C
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25
°
C, V
= 5.0 volts, 100,000 cycles. In addition,
programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-
tions of 90
°
C, V
= 4.5 volts (4.75 volts for 55 ns version), 100,000 cycles.
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
command. See Table 5 for further information on command sequences.
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes
are programmed to 0x00 before erasure.
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most
bytes program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the maximum
byte program time specified is exceeded. See Write Operation Status section for additional information.
n
o
p
c
s
e
D
n
o
p
0
7
0
7
O
-
d
e
5
5
e
5
5
p
-
S
t
U
5
4
5
4
-
0
9
0
9
-
e
m
p
i
m
e
1
n
n
n
n
n
n
n
n
n
n
p
y
T
a
M
y
T
a
M
y
T
a
M
y
T
a
M
y
T
a
M
y
T
a
M
y
T
n
M
n
M
M
M
M
M
M
M
M
M
M
M
s
s
s
s
s
s
s
s
s
s
s
s
s
s
n
n
n
n
n
n
n
n
n
n
μ
μ
μ
μ
e
s
e
s
e
s
e
s
e
s
e
s
e
s
e
s
e
y
e
y
s
n
e
m
e
i
m
e
0
5
5
4
2
5
5
4
2
5
0
4
3
5
5
4
4
0
0
0
0
e
W
e
r
B
e
m
i
e
m
e
m
h
h
0
3
0
3
5
3
5
4
h
g
0
7
0
2
1
0
5
6
8
1
1
3
1
8
1
8
0
0
0
0
1
0
3
2
t
1
H
W
H
W
t
1
H
W
H
W
n
o
r
p
O
g
n
m
m
a
r
o
r
P
3
,
,
e
d
o
M
e
B
x
0
3
d
e
r
o
W
M
d
p
x
p
x
p
x
p
x
p
x
p
0
n
o
r
p
O
g
n
m
m
a
r
o
r
P
p
C
5
,
,
,
e
d
o
M
e
B
c
c
c
c
c
c
c
c
d
e
r
o
W
M
d
3
t
2
H
W
H
W
t
2
H
W
H
W
n
o
r
p
O
e
s
a
r
E
r
e
S
4
,
,
t
3
H
W
H
W
t
3
H
W
H
W
n
o
r
p
O
e
s
a
r
E
p
C
4
,
,
1
8
e
c
n
a
r
d
n
E
e
y
C
m
a
r
o
r
P
d
n
a
e
s
a
r
E
0
0
0
0
0
s
s
c
c
0
3
t
Y
S
U
B
y
a
D
#
Y
B
/
Y
R
o
#
E
C
0
3
5
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY29F400TG70 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BR45 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BR55 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BR70 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29F400BT-45 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM |
| HY29F400BT55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BT-55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM |
| HY29F400BT70 | 制造商:HYUNDAI 功能描述:New |
| HY29F400BT-70 | 制造商:Hyundai 功能描述:NOR Flash, 256K x 16, 48 Pin, Plastic, TSSOP |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。