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參數資料
型號: HY29F400BT55
廠商: Hynix Semiconductor Inc.
英文描述: 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
中文描述: 4兆位(512Kx8/256Kx16)5伏只閃存
文件頁數: 34/40頁
文件大小: 509K
代理商: HY29F400BT55
34
Rev. 5.2/May 01
HY29F400
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
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Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25
°
C, V
= 5.0 volts, 100,000 cycles. In addition,
programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-
tions of 90
°
C, V
= 4.5 volts (4.75 volts for 55 ns version), 100,000 cycles.
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
command. See Table 5 for further information on command sequences.
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes
are programmed to 0x00 before erasure.
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most
bytes program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the maximum
byte program time specified is exceeded. See Write Operation Status section for additional information.
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相關PDF資料
PDF描述
HY29F400TT45 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400TT55 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400TT70 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400TT90 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
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相關代理商/技術參數
參數描述
HY29F400BT-55 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM
HY29F400BT70 制造商:HYUNDAI 功能描述:New
HY29F400BT-70 制造商:Hyundai 功能描述:NOR Flash, 256K x 16, 48 Pin, Plastic, TSSOP
HY29F400BT90 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400BT-90 制造商:HYUNDAI 功能描述:NOR Flash, 256K x 16, 48 Pin, Plastic, TSSOP
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