- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385414 > HY29F400TT70 (Hynix Semiconductor Inc.) 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory PDF資料下載
參數(shù)資料
| 型號： | HY29F400TT70 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| 中文描述： | 4兆位（512Kx8/256Kx16）5伏只閃存 |
| 文件頁數(shù)： | 15/40頁 |
| 文件大小： | 509K |
| 代理商： | HY29F400TT70 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁當前第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁
15
Rev. 5.2/May 01
HY29F400
After an erase-suspended program operation is
complete, the host can initiate another program-
ming operation (or read operation) within non-sus-
pended sectors. The host can determine the sta-
tus of a program operation during the erase-sus-
pended state just as in the standard programming
operation.
The system must write the Erase Resume com-
mand to exit the Erase Suspend mode and con-
tinue the sector erase operation. Further writes of
the Resume command are ignored. Another Erase
Suspend command can be written after the de-
vice has resumed erasing.
The host may also write the Electronic ID com-
mand sequence when the device is in the Erase
Suspend mode. The device allows reading Elec-
tronic ID codes even if the addresses used for the
ID read cycles are within erasing sectors, since
the codes are not stored in the memory array.
When the device exits the Electronic ID mode, the
device reverts to the Erase Suspend mode, and
is ready for another valid operation. See Electronic
ID section for more information.
Electronic ID Command
The Electronic ID operation intended for use in
programming equipment has been described pre-
viously. The host processor can also be obtain
the same data by using the Electronic ID com-
mand sequence shown in Table 5. This method
does not require V
ID
on any pin. The Electronic ID
command sequence may be invoked while the
device is in the Read mode or the Erase Suspend
mode, but is invalid while the device is actively
programming or erasing.
The Electronic ID command sequence is initiated
by writing two unlock cycles, followed by the Elec-
tronic ID command. The device then enters the
Electronic ID mode, and:
A read cycle at address 0xXXX00 retrieves the
manufacturer code (Hynix = 0xAD).
In Word mode, a read cycle at address
0xXXX01 returns the device code (HY29F400T
= 0x2223, HY29F400B = 0x22AB). In Byte
mode, the same information is retrieved from
address 0xXXX02 (HY29F400T = 0x23,
HY29F400B = 0xAB).
In Word mode, a read cycle containing a sec-
tor address in A[17:12] and the address 0x02
in A[7:0] returns 0xXX01 if that sector is pro-
tected, or 0xXX00 if it is unprotected. In Byte
mode, the status information is retrieved using
0x04 in A[6:-1] (0x01 if the sector is protected,
0x00 if the sector is unprotected).
The host system may read at any address any
number of times, without initiating another com-
mand sequence. Thus, for example, the host may
determine the protection status for all sectors by
doing successive reads at the address specified
above while changing the sector address for each
cycle.
The system must write the Reset command to exit
the Electronic ID mode and return to the Read
mode, or to the Erase Suspend mode if the de-
vice was in that mode when the command se-
quence was issued.
WRITE OPERATION STATUS
The HY29F400 provides a number of facilities to
determine the status of a program or erase op-
eration. These are the RY/BY# (Ready/Busy#)
pin and certain bits of a status word which can be
read from the device during the programming and
erase operations. Table 6 summarizes the status
indications and further detail is provided in the
subsections which follow.
RY/BY# - Ready/Busy#
RY/BY# is an open-drain output pin that indicates
whether a programming or erase Automatic Algo-
rithm is in progress or has completed. A pull-up
resistor to V
CC
is required for proper operation. RY/
BY# is valid after the rising edge of the final WE#
pulse in the corresponding command sequence.
If the output is Low (busy), the device is actively
erasing or programming, including programming
while in the Erase Suspend mode. If the output is
High (ready), the device has completed the op-
eration and is ready to read array data in the nor-
mal or Erase Suspend modes, or it is in the standby
mode.
DQ[7] - Data# Polling
The Data# (
“
Data Bar
”
) Polling bit, DQ[7], indicates
to the host system whether an Automatic Algo-
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY29F400TT90 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400TR45 | 128 x 64 pixel format, White LED backlight |
| HY29F400TR55 | 128 x 64 pixel format, White or blue LED backlight |
| HY29F400TR70 | 128 x 64 pixel format, White or blue LED backlight |
| HY29F400TR90 | 150 x 32 pixel format, LED Backlight available |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29F400TT-70 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM |
| HY29F400TT90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400TT-90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM |
| HY29F800 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復。