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參數資料
| 型號： | HY29F400TT90 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| 中文描述： | 4兆位（512Kx8/256Kx16）5伏只閃存 |
| 文件頁數： | 19/40頁 |
| 文件大小： | 509K |
| 代理商： | HY29F400TT90 |
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19
Rev. 5.2/May 01
HY29F400
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#,
CE# or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by asserting any one of
the following conditions: OE# = V
IL
, CE# = V
IH
, or
WE# = V
IH
. To initiate a write cycle, CE# and WE#
must be a logical zero while OE# is a logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power
up, the device does not accept commands on the
rising edge of WE#. The internal state machine is
automatically reset to the Read mode on power-
up.
Sector Protection
Additional data protection is provided by the
HY29F400
’
s sector protect feature, described pre-
viously, which can be used to protect sensitive
areas of the Flash array from accidental or unau-
thorized attempts to alter the data.
相關PDF資料 |
PDF描述 |
|---|---|
| HY29F400TR45 | 128 x 64 pixel format, White LED backlight |
| HY29F400TR55 | 128 x 64 pixel format, White or blue LED backlight |
| HY29F400TR70 | 128 x 64 pixel format, White or blue LED backlight |
| HY29F400TR90 | 150 x 32 pixel format, LED Backlight available |
| HY29F400BG70 | MS3470L14-5A |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY29F400TT-90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM |
| HY29F800 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ABG-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ABG-12I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
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