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參數資料
| 型號： | HY29LV160 |
| 英文描述： | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory(16 M位 (2M x 8/1M x 16)低電壓閃速存儲器) |
| 中文描述： | 16兆位（2米x 8/1M × 16）低壓快閃記憶體（16米位（2米x 8/1M × 16）低電壓閃速存儲器） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 56K |
| 代理商： | HY29LV160 |
KEY FEATURES
n
Single Power Supply Operation
– Read, program and erase operations from
2.7 to 3.6 volts
– Ideal for battery-powered applications
n
High Performance
– 70, 90 and 120 ns access time versions
n
Ultra-low Power Consumption (Typical
Values At 5 Mhz)
– Automatic sleep mode current: 0.2 μA
– Standby mode current: 0.2 μA
– Read current: 9 mA
– Program/erase current: 20 mA
n
Flexible Sector Architecture:
– One 16 KB, two 8 KB, one 32 KB and
thirty-one 64 KB sectors in byte mode
– One 8 KW, two 4 KW, one 16 KW and
thirty-one 32 KW sectors in byte mode
– Top or bottom boot block configurations
available
n
Sector Protection
– Allows locking of a sector or sectors to
prevent program or erase operations
within that sector
– Sectors lockable in-system or via
programming equipment
– Temporary Sector Unprotect allows
changes in locked sectors (requires high
voltage on RESET# pin)
n
Fast Program and Erase Times
– Sector erase time: 0.7 sec typical for each
sector
– Chip erase time: 25 sec typical
– Byte program time: 9
μ
s typical
n
Unlock Bypass Program Command
– Reduces programming time when issuing
multiple program command sequences
n
Automatic Erase Algorithm Preprograms
and Erases Any Combination of Sectors
or the Entire Chip
n
Automatic Program Algorithm Writes and
Verifies Data at Specified Addresses
n
Compliant With Common Flash Memory
Interface (CFI) Specification
– Flash device parameters stored directly
on the device
– Allows software driver to identify and use
a variety of different current and future
Flash products
Product Brief
Revision 1.0, February 2000
A[19:0]
20
CE#
OE#
RESET#
BYTE#
WE#
8
7
DQ[7:0]
DQ[14:8]
DQ15/A-1
RY/BY#
RY/BY# not available in PSOP package
LOGIC DIAGRAM
n
Minimum 100,000 Write Cycles per Sector
n
Compatible With JEDEC standards
– Pinout and software compatible with
single-power supply Flash devices
– Superior inadvertent write protection
n
Data# Polling and Toggle Bits
– Provide software confirmation of
completion of program and erase
operations
n
Ready/Busy# Pin
– Provides hardware confirmation of
completion of program and erase
operations
– Not available in PSOP package versions
n
Erase Suspend/Erase Resume
– Suspends an erase operation to allow
reading data from, or programming data
to, a sector that is not being erased
– Erase Resume can then be invoked to
complete suspended erasure
n
Hardware Reset Pin (RESET#) Resets the
Device to Reading Array Data
n
Space Efficient Packaging
– 44-pin PSOP, 48-pin TSOP, 48-ball μBGA
and 48-ball FBGA packages
HY29LV160
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HY29LV160BF-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BF-12I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BF-70 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BF-70I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BF-80 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
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