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參數資料
| 型號： | HY29LV160BF-12 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| 中文描述： | 1M X 16 FLASH 2.7V PROM, 120 ns, PBGA48 |
| 封裝： | 8 X 9 MM, FBGA-48 |
| 文件頁數： | 1/48頁 |
| 文件大?。?/td> | 517K |
| 代理商： | HY29LV160BF-12 |
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KEY FEATURES
Single Power Supply Operation
– Read, program and erase operations from
2.7 to 3.6 volts
– Ideal for battery-powered applications
High Performance
– 70, 80, 90 and 120 ns access time
versions
Ultra-low Power Consumption (Typical
Values At 5 Mhz)
– Automatic sleep mode current: 1 μA
– Standby mode current: 1 μA
– Read current: 9 mA
– Program/erase current: 20 mA
Flexible Sector Architecture:
– One 16 KB, two 8 KB, one 32 KB and
thirty-one 64 KB sectors in byte mode
– One 8 KW, two 4 KW, one 16 KW and
thirty-one 32 KW sectors in word mode
– Top or bottom boot block configurations
available
Sector Protection
– Allows locking of a sector or sectors to
prevent program or erase operations
within that sector
– Sectors lockable in-system or via
programming equipment
– Temporary Sector Unprotect allows
changes in locked sectors (requires high
voltage on RESET# pin)
Fast Program and Erase Times
– Sector erase time: 0.25 sec typical for
each sector
– Chip erase time: 8 sec typical
– Byte program time: 9
μ
s typical
Unlock Bypass Program Command
– Reduces programming time when issuing
multiple program command sequences
Automatic Erase Algorithm Preprograms
and Erases Any Combination of Sectors
or the Entire Chip
Erase Suspend/Erase Resume
– Suspends an erase operation to allow
reading data from, or programming data
to, a sector that is not being erased
– Erase Resume can then be invoked to
complete suspended erasure
Automatic Program Algorithm Writes and
Verifies Data at Specified Addresses
Preliminary
Revision 1.2, May 2001
A[19:0]
20
CE#
OE#
RESET#
BYTE#
WE#
8
7
DQ[7:0]
DQ[14:8]
DQ15/A-1
RY/BY#
LOGIC DIAGRAM
100,000 Write Cycles per Sector Minimum
Data# Polling and Toggle Bits
–
Provide software confirmation of
completion of program and erase
operations
Ready/Busy# Pin
–
Provides hardware confirmation of
completion of program and erase
operations
Hardware Reset Pin (RESET#) Resets the
Device to Reading Array Data
Compliant With Common Flash Memory
Interface (CFI) Specification
–
Flash device parameters stored directly
on the device
–
Allows software driver to identify and use
a variety of different current and future
Flash products
Compatible With JEDEC standards
–
Pinout and software compatible with
single-power supply Flash devices
–
Superior inadvertent write protection
Space Efficient Packaging
–
48-pin TSOP and 48-ball FBGA packages
HY29LV160
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
相關PDF資料 |
PDF描述 |
|---|---|
| HY29LV160BF-12I | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160TT-90 | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BT-90 | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160TF-70 | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BF-80 | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY29LV160BF-12I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BF-70 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BF-70I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BF-80 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BF-80I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
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