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參數資料
型號: HY29LV160TT-90I
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
中文描述: 1M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
封裝: TSOP-48
文件頁數: 1/48頁
文件大小: 517K
代理商: HY29LV160TT-90I
KEY FEATURES
Single Power Supply Operation
– Read, program and erase operations from
2.7 to 3.6 volts
– Ideal for battery-powered applications
High Performance
– 70, 80, 90 and 120 ns access time
versions
Ultra-low Power Consumption (Typical
Values At 5 Mhz)
– Automatic sleep mode current: 1 μA
– Standby mode current: 1 μA
– Read current: 9 mA
– Program/erase current: 20 mA
Flexible Sector Architecture:
– One 16 KB, two 8 KB, one 32 KB and
thirty-one 64 KB sectors in byte mode
– One 8 KW, two 4 KW, one 16 KW and
thirty-one 32 KW sectors in word mode
– Top or bottom boot block configurations
available
Sector Protection
– Allows locking of a sector or sectors to
prevent program or erase operations
within that sector
– Sectors lockable in-system or via
programming equipment
– Temporary Sector Unprotect allows
changes in locked sectors (requires high
voltage on RESET# pin)
Fast Program and Erase Times
– Sector erase time: 0.25 sec typical for
each sector
– Chip erase time: 8 sec typical
– Byte program time: 9
μ
s typical
Unlock Bypass Program Command
– Reduces programming time when issuing
multiple program command sequences
Automatic Erase Algorithm Preprograms
and Erases Any Combination of Sectors
or the Entire Chip
Erase Suspend/Erase Resume
– Suspends an erase operation to allow
reading data from, or programming data
to, a sector that is not being erased
– Erase Resume can then be invoked to
complete suspended erasure
Automatic Program Algorithm Writes and
Verifies Data at Specified Addresses
Preliminary
Revision 1.2, May 2001
A[19:0]
20
CE#
OE#
RESET#
BYTE#
WE#
8
7
DQ[7:0]
DQ[14:8]
DQ15/A-1
RY/BY#
LOGIC DIAGRAM
100,000 Write Cycles per Sector Minimum
Data# Polling and Toggle Bits
Provide software confirmation of
completion of program and erase
operations
Ready/Busy# Pin
Provides hardware confirmation of
completion of program and erase
operations
Hardware Reset Pin (RESET#) Resets the
Device to Reading Array Data
Compliant With Common Flash Memory
Interface (CFI) Specification
Flash device parameters stored directly
on the device
Allows software driver to identify and use
a variety of different current and future
Flash products
Compatible With JEDEC standards
Pinout and software compatible with
single-power supply Flash devices
Superior inadvertent write protection
Space Efficient Packaging
48-pin TSOP and 48-ball FBGA packages
HY29LV160
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
相關PDF資料
PDF描述
HY29LV160BF-70 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160BT-12 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160TF-12 Circular Connector; No. of Contacts:55; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-55
HY29LV160TF-12I 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160TT-12 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
相關代理商/技術參數
參數描述
HY29LV320 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320B 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320BF-12 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320BF-12I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320BF-70 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory
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