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參數(shù)資料
| 型號： | HY29LV320TT-12 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 150 x 32 pixel format, LED Backlight available |
| 中文描述： | 2M X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| 封裝： | TSOP-48 |
| 文件頁數(shù)： | 1/44頁 |
| 文件大小： | 323K |
| 代理商： | HY29LV320TT-12 |
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KEY FEATURES
Single Power Supply Operation
– Read, program and erase operations from
2.7 to 3.6 volts
– Ideal for battery-powered applications
High Performance
– 70, 80, 90 and 120 ns access time
versions for full voltage range operation
Ultra-low Power Consumption (Typical/
Maximum Values)
– Automatic sleep/standby current: 0.5/5.0
μA
– Read current: 9/16 mA (@ 5 MHz)
– Program/erase current: 20/30 mA
Top and Bottom Boot Block Versions
– Provide one 8 KW, two 4 KW, one 16 KW
and sixty-three 32 KW sectors
Secured Sector
– An extra 128-word, factory-lockable
sector available for an Electronic Serial
Number and/or additional secured data
Sector Protection
– Allows locking of a sector or sectors to
prevent program or erase operations
within that sector
– Temporary Sector Unprotect allows
changes in locked sectors
Fast Program and Erase Times (typicals)
– Sector erase time: 0.5 sec per sector
– Chip erase time: 32 sec
– Word program time: 11
μ
s
– Accelerated program time per word: 7
μ
s
Automatic Erase Algorithm Preprograms
and Erases Any Combination of Sectors
or the Entire Chip
Automatic Program Algorithm Writes and
Verifies Data at Specified Addresses
Compliant With Common Flash Memory
Interface (CFI) Specification
– Flash device parameters stored directly
on the device
– Allows software driver to identify and use a
variety of current and future Flash products
Minimum 100,000 Write Cycles per Sector
Revision 1.3, May 2002
A[20:0]
21
CE#
OE#
WE#
16
DQ[15:0]
RESET#
RY/BY#
WP#/ACC
LOGIC DIAGRAM
Compatible With JEDEC standards
–
Pinout and software compatible with
single-power supply Flash devices
–
Superior inadvertent write protection
Data# Polling and Toggle Bits
–
Provide software confirmation of
completion of program and erase
operations
Ready/Busy (RY/BY#) Pin
–
Provides hardware confirmation of
completion of program and erase
operations
Write Protect Function (WP#/ACC pin)
Allows hardware protection of the first or
last 32 KW of the array, regardless of sector
protect status
Acceleration Function (WP#/ACC pin)
Provides accelerated program times
Erase Suspend/Erase Resume
–
Suspends an erase operation to allow
reading data from, or programming data
to, a sector that is not being erased
–
Erase Resume can then be invoked to
complete suspended erasure
Hardware Reset Pin (RESET#) Resets the
Device to Reading Array Data
Space Efficient Packaging
–
48-pin TSOP and 63-ball FBGA packages
HY29LV320
32 Mbit (2M x 16) Low Voltage Flash Memory
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY29LV320TT-12I | 150 x 32 pixel format, LED Backlight available |
| HY57V283220LT-5 | 4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220LT-55 | 4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220LT-6 | 4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220LT-7 | 4 Banks x 1M x 32Bit Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29LV320TT-12I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320TT-70 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320TT-70I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320TT-80 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320TT-80I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
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