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| 型號： | HY51V17404AJ-80 |
| 英文描述： | x4 EDO Page Mode DRAM |
| 中文描述： | x4 EDO公司頁面模式的DRAM |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 94K |
| 代理商： | HY51V17404AJ-80 |
HY51V(S)16400HG/HGL
4M x 4Bit Fast Page DRAM
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.0.1/Apr.01
ESCRIPTION
The HY51V(S)16400HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.
HY51V(S)16400HG/HGL has realized higher density, higher performance and various functions by utiliz-
ing advanced CMOS process technology. The HY51V(S)16400HG/HGL offers Fast Page Mode as a high
speed access mode. Multiplexed address inputs permit the HY51V(S)16400HG/HGL to be packaged in
standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II. The package size provides high system bit densi-
ties and is compatible with widely available automated testing and insertion equipment.
System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability
with high performance logic families such as Schottky TTL.
FEATURES
Fast Page Mode capability
Read-modify-write capability
Multi-bit parallel test capability
TTL(3.3V) compatible inputs and outputs
/RAS only, CAS-before-/RAS, Hidden and self
refresh(L-version) capability
Fast access time and cycle time
ORDERING INFORMATION
Part No
tRAC
tCAC
tRC
tPC
HY51V(S)16400HG/HGL-5
50ns
13ns
90ns
35ns
HY51V(S)16400HG/HGL-6
60ns
15ns
110ns
40ns
HY51V(S)16400HG/HGL-7
70ns
18ns
130ns
45ns
50ns
60ns
70ns
Active
324mW
288mW
252mW
Standby
7.2mW(CMOS level Max)
0.36mW (L-version : Max)
Part Number
Access Time
Package
HY51V(S)16400HGJ/HG(L)J-5
HY51V(S)16400HGJ/HG(L)J-6
HY51V(S)16400HGJ/HG(L)J-7
50ns
60ns
70ns
300mil 24(26)pin SOJ
HY51V(S)16400HGT/HG(L)T-5
HY51V(S)16400HGT/HG(L)T-6
HY51V(S)16400HGT/HG(L)T-7
50ns
60ns
70ns
300mil 24(26)pin TSOP-II
PRELIMINARY
JEDEC standard pinout
24(26)pin plastic SOJ/TSOP-II(300mil)
Single power supply of 3.3V +/- 0.3V
Battery back up operation(L-version)
Power dissipation
Refresh cycle
Part No
Ref
Normal
L-part
HY51V16400HG
4K
64ms
HY51V16400HGL
4K
128ms
(S) : Self refresh, (L) : Low power
相關(guān)PDF資料 |
PDF描述 |
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| HY51V17404AR-60 | x4 EDO Page Mode DRAM |
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| HY51V17404AR-80 | x4 EDO Page Mode DRAM |
| HY51V17404ASLJ-60 | x4 EDO Page Mode DRAM |
| HY51V17404ASLJ-70 | x4 EDO Page Mode DRAM |
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