欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: HY51V18163HGJ
廠商: Hynix Semiconductor Inc.
英文描述: 1M x 16Bit EDO DRAM
中文描述: 100萬× 16 EDO公司的DRAM
文件頁數: 1/12頁
文件大小: 107K
代理商: HY51V18163HGJ
HY51V(S)18163HG/HGL
1M x 16Bit EDO DRAM
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.0.1/Apr.01
DESCRIPTION
The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit.
HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utiliz-
ing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out Page-
Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)18163HG/HGL to be
packaged in standard 400mil 42pin SOJ and 44(50) pin TSOP-II. The package size provides high system
bit densities and is compatible with widely available automated testing and insertion equipment.
FEATURES
Extended Data Out Mode capability
Read-modify-write capability
Multi-bit parallel test capability
TTL(3.3V) compatible inputs and outputs
/RAS only, CAS-before-/RAS, Hidden and self
refresh(L-version) capability
Fast access time and cycle time
ORDERING INFORMATION
Part No
tRAC
tCAC
tRC
tHPC
HY51V(S)18163HG/HGL-5
50ns
13ns
84ns
20ns
HY51V(S)18163HG/HGL-6
60ns
15ns
104ns
25ns
HY51V(S)18163HG/HGL-7
70ns
18ns
124ns
30ns
50ns
60ns
70ns
Active
684mW
612mW
540mW
Standby
7.2mW(CMOS level Max)
0.83mW (L-version : Max)
Part Number
Access Time
Package
HY51V(S)18163HGJ/HG(L)J-5
HY51V(S)18163HGJ/HG(L)J-6
HY51V(S)18163HGJ/HG(L)J-7
50ns
60ns
70ns
400mil 42pin SOJ
HY51V(S)18163HGT/HG(L)T-5
HY51V(S)18163HGT/HG(L)T-6
HY51V(S)18163HGT/HG(L)T-7
50ns
60ns
70ns
400mil 44(50)pin TSOP-II
PRELIMINARY
JEDEC standard pinout
42pin plastic SOJ / 44(50)pin TSOP-II (400mil)
Single power supply of 3.3V +/- 0.3V
Battery back up operation(L-version)
2CAS byte control
Power dissipation
Refresh cycle
Part No
Ref
Normal
L-part
HY51V18163HG
1K
16ms
HY51V18163HGL
1K
128ms
(S) : Self refresh, (L) : Low power
相關PDF資料
PDF描述
HY51V18163HGJ-5 1M x 16Bit EDO DRAM
HY51V18163HGJ-6 1M x 16Bit EDO DRAM
HY51V18163HGT-7 1M x 16Bit EDO DRAM
HY51VS18163HG 1M x 16Bit EDO DRAM
HY51V18163HGJ-7 1M x 16Bit EDO DRAM
相關代理商/技術參數
參數描述
HY51V65164ATC-60 制造商:Hyundai 功能描述:
HY52 制造商:AEARO 功能描述:HYGIENE KIT OPTIME II DEFENDER 制造商:3M Electronic Products Division 功能描述:Hygiene Kit for Optime II Ear Defender
HY5203-015M 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Logic IC
HY5203-015R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Logic IC
HY5203-015Z 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Logic IC
主站蜘蛛池模板: 兴和县| 安新县| 乌鲁木齐市| 洛南县| 铜川市| 左云县| 遵义县| 中阳县| 峡江县| 金华市| 什邡市| 洱源县| 定日县| 商南县| 玉溪市| 织金县| 平果县| 彭阳县| 会东县| 永胜县| 德庆县| 多伦县| 平果县| 集贤县| 海丰县| 张掖市| 开化县| 石门县| 鹤庆县| 教育| 上高县| 佛山市| 凤山县| 荔波县| 河北省| 凌海市| 万年县| 靖西县| 华安县| 和林格尔县| 江西省|