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參數(shù)資料
| 型號(hào)： | HY57V161610ET-6 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| 中文描述： | 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50 |
| 封裝： | 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 |
| 文件頁(yè)數(shù)： | 1/13頁(yè) |
| 文件大?。?/td> | 181K |
| 代理商： | HY57V161610ET-6 |
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HY57V161610E
2 Banks x 512K x 16 Bit Synchronous DRAM
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for
use of circuits described. No patent licenses are implied
Rev. 0.2 / Aug. 2003 1
DESCRIPTION
THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic appli-
cations which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16.
HY57V161610E is offering fully synchronous operation referenced to a positive edge clock. All inputs and outputs are synchronized
with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output
voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 1,2 or 3), the number of consecutive read or write cycles initi-
ated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave). A
burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a
new burst read or write command on any cycle. (This pipeline design is not restricted by a `2N` rule.)
FEATURES
Single 3.0V to 3.6V power supply
All device pins are compatible with LVTTL interface
JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin
pitch
All inputs and outputs referenced to positive edge of system
clock
Data mask function by UDQM/LDQM
Internal two banks operation
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4, 8 and Full Page for Sequence Burst
- 1, 2, 4 and 8 for Interleave Burst
Programmable CAS Latency ; 1, 2, 3 Clocks
ORDERING INFORMATION
Part No.
Clock Frequency
Organization
Interface
Package
HY57V161610ET-5
200MHz
2Banks x 512Kbits x 16
LVTTL
400mil
50pin TSOP II
HY57V161610ET-55
183MHz
HY57V161610ET-6
166MHz
HY57V161610ET-7
143MHz
HY57V161610ET-8
125MHz
HY57V161610ET-10
100MHz
HY57V161610ET-15
66MHz
Note :
1. V
DD
(min) of HY57V161610ET-5/55 is 3.15V
相關(guān)PDF資料 |
PDF描述 |
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| HY57V161610ET-7 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-8 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-10 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-15 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-5 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V161610ET-6I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-7 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-7I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-8 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-8I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM |
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