- 您現在的位置：買賣IC網 > PDF目錄385419 > HY57V281620ET (Hynix Semiconductor Inc.) 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O PDF資料下載
參數資料
| 型號： | HY57V281620ET |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| 中文描述： | 128Mb的同步DRAM的基礎上2米x 4Bank x16的I / O |
| 文件頁數： | 1/13頁 |
| 文件大小： | 126K |
| 代理商： | HY57V281620ET |
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 1.1 / J an. 2005
1
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/ O
Document Title
4Bank x 2M x 16bits Synchronous DRAM
Revision History
Revision No.
History
Draft Date
Remark
1.0
First Version Release
Dec. 2004
1.1
1. Corrected PIN ASSIGNMENT A12 to NC
Jan. 2005
相關PDF資料 |
PDF描述 |
|---|---|
| HY57V281620ETP-5 | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ETP-6 | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ETP-7 | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ETP-H | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ELTP-5 | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY57V281620ET-5 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ET-6 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ET-7 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ET-H | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ETP-5 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
發布緊急采購，3分鐘左右您將得到回復。