- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385423 > HY57V64820HGT-S (HYNIX SEMICONDUCTOR INC) 4 Banks x 2M x 8Bit Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | HY57V64820HGT-S |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 4 Banks x 2M x 8Bit Synchronous DRAM |
| 中文描述： | 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 134K |
| 代理商： | HY57V64820HGT-S |
HY57V64820HG
4 Banks x 2M x 8Bit Synchronous DRAM
This document is a general product description and is subject to change without notice.Hynix Semiconductor does not assume any responsibility for use
of circuits described. No patent licenses are implied.
Rev. 0.5/Sep. 02 1
DESCRIPTION
The Hynix HY57V64820HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which
require large memory density and high bandwidth. HY57V64820HG is organized as 4banks of 2,097,152x8.
HY57V64820HG is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchro-
nized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output
voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by
a single control command (Burst length of 1,2,4,8 or Full page), and the burst count sequence(sequential or interleave). A burst of read
or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or
write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)
FEATURES
Single 3.3
±
0.3V power supply
All device pins are compatible with LVTTL interface
JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin
pitch
All inputs and outputs referenced to positive edge of sys-
tem clock
Data mask function by DQM
Internal four banks operation
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
Programmable CAS Latency ; 2, 3 Clocks
ORDERING INFORMATION
Part No.
Clock Frequency
Power
Organization
Interface
Package
HY57V64820HGT-5/55/6/7
200/183/166/143MHz
Normal
4Banks x 2Mbits x8
LVTTL
400mil 54pin TSOP II
HY57V64820HGT-K
133MHz
HY57V64820HGT-H
133MHz
HY57V64820HGT-8
125MHz
HY57V64820HGT-P
100MHz
HY57V64820HGT-S
100MHz
HY57V64820HGLT-5/55/6/7
200/183/166/143MHz
Low power
HY57V64820HGLT-K
133MHz
HY57V64820HGLT-H
133MHz
HY57V64820HGLT-8
125MHz
HY57V64820HGLT-P
100MHz
HY57V64820HGLT-S
100MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY57V64820HGTP | 4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V64820HGLT-7 | 4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V64820HGLT-8 | 4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V64820HGLT-H | CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN |
| HY57V64820HGLT-K | 4 Banks x 2M x 8Bit Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V651610TC-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HY57V651610TC-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HY57V651610TC-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HY57V651611TC-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HY57V651611TC-7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。