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參數資料
| 型號： | HY57V651620BLTC-8 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 4 Banks x 1M x 16Bit Synchronous DRAM |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 81K |
| 代理商： | HY57V651620BLTC-8 |
HY57V651620B
4 Banks x 1M x 16Bit Synchronous DRAM
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of
circuits described. No patent licenses are implied.
Rev. 1.9/Apr.01
DESCRIPTION
The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which
require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16.
HY57V641620HG is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchro-
nized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output
voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated
by a single control command (Burst length of 1,2,4,8 or Full page), and the burst count sequence(sequential or interleave). A burst of
read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst
read or write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)
FEATURES
Single 3.3
±
0.3V power supply
Note)
All device pins are compatible with LVTTL interface
JEDEC standard 400mil 54pin TSOP-II with 0.8mm
of pin pitch
All inputs and outputs referenced to positive edge of
system clock
Data mask function by UDQM or LDQM
Internal four banks operation
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
Programmable C A S Latency ; 2, 3 Clocks
ORDERING INFORMATION
Note : VDD(Min) of HY57V651620B(L)TC-55/6/7 is 3.135V
Part No.
Clock Frequency
Power
Organization
Interface
Package
H Y 5 7 V 6 5 1 6 2 0 B T C - 5 5
1 8 3 M H z
Normal
4Banks x 1Mbits
x16
L V T T L
400mil 54pin TSOP II
H Y 5 7 V 6 5 1 6 2 0 B T C - 6
1 6 6 M H z
H Y 5 7 V 6 5 1 6 2 0 B T C - 7
1 4 3 M H z
H Y 5 7 V 6 5 1 6 2 0 B T C - 7 5
1 3 3 M H z
H Y 5 7 V 6 5 1 6 2 0 B T C - 8
1 2 5 M H z
HY57V651620BTC-10P
1 0 0 M H z
HY57V651620BTC-10S
1 0 0 M H z
H Y 5 7 V 6 5 1 6 2 0 B T C - 1 0
1 0 0 M H z
H Y 5 7 V 6 5 1 6 2 0 B L T C - 5 5
1 8 3 M H z
Low power
H Y 5 7 V 6 5 1 6 2 0 B L T C - 6
1 6 6 M H z
H Y 5 7 V 6 5 1 6 2 0 B L T C - 7
1 4 3 M H z
H Y 5 7 V 6 5 1 6 2 0 B L T C - 7 5
1 3 3 M H z
H Y 5 7 V 6 5 1 6 2 0 B L T C - 8
1 2 5 M H z
HY57V651620BLTC-10P
1 0 0 M H z
HY57V651620BLTC-10S
1 0 0 M H z
H Y 5 7 V 6 5 1 6 2 0 B L T C - 1 0
1 0 0 M H z
相關PDF資料 |
PDF描述 |
|---|---|
| HY57V651620BTC-10 | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BTC-10P | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BTC-10S | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BTC-55 | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BTC-6 | 4 Banks x 1M x 16Bit Synchronous DRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY57V651620BLTC-I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4Mx16|3.3V|4K|6/7/75/10P/10S|SDR SDRAM - 64M |
| HY57V651620BLTC-P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HY57V651620BLTC-S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HY57V651620BTC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4Mx16|3.3V|4K|H|SDR SDRAM - 64M |
| HY57V651620BTC-10 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
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