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參數(shù)資料

型號：	HY5S6B6DSF-SE
廠商：	HYNIX SEMICONDUCTOR INC
元件分類：	DRAM
英文描述：	4Banks x1M x 16bits Synchronous DRAM
中文描述：	4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
封裝：	0.80 MM PITCH, FBGA-54
文件頁數(shù)：	1/27頁
文件大小：	368K
代理商：	HY5S6B6DSF-SE

This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

use of circuits described. No patent licenses are implied.

Rev 0.3 / July 2004

HY5S6B6D(L/S)F(P)-xE

4Banks x1M x 16bits Synchronous DRAM

Document Title

4Bank x 1M x 16bits Synchronous DRAM

Revision History

Revision No.

History

Draft Date

Remark

0.1

Initial Draft

Sep. 2003

Preliminary

0.2

Append Super-Low Power Group to the Data-sheet

Oct. 2003

Preliminary

0.3

Changed DC Characteristics

Nov. 2003

Changed Package Information

July 2004

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HY62256A	32Kx8bit CMOS SRAM
HY62256ALLJ	32Kx8bit CMOS SRAM
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相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
HY5S7B2ALFP-6	制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M (16Mx32bit) Mobile SDRAM
HY5S7B2ALFP-6E	制造商:SK Hynix Inc 功能描述:
HY5S7B2ALFP-H	制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M (16Mx32bit) Mobile SDRAM
HY5S7B2ALFP-S	制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M (16Mx32bit) Mobile SDRAM
HY5S7B2LF-H	制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M (16Mx32bit) Mobile SDRAM

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