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參數(shù)資料
| 型號(hào)： | HY62U8400ALLR2-I |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 512Kx8bit CMOS SRAM |
| 中文描述： | 512Kx8bit CMOS SRAM的 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 180K |
| 代理商： | HY62U8400ALLR2-I |
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 07 / Apr. 2001 Hynix Semiconductor
HY62U8400A Series
512Kx8bit CMOS SRAM
Document Title
512K x8 bit 3.0V Low Power CMOS slow SRAM
Revision History
Revision No History Draft Date Remark
04 Revision History Insert Jul.26.2000 Final
Revised
- Insert 70ns Part
- Improved standby current
Isb1 : 30uA
20uA
05 Revised Aug.04.2000 Final
- Change Iccdr Value : 15uA => 20uA
06 Marking Information Add Dec.04.2000 Final
Revised
-
E.T (-25~85
°
C), I.T (-40~85
°
C) Part Insert
-
AC Test Condition Add : 5pF Test Load
-
tCLZ Value Change : 15ns/20ns - > 10ns
-
V
IH
max : Vcc + 0.2V => Vcc + 0.3V
-
V
IL
min : - 0.2V => - 0.3V
07 Changed Logo Apr.30.2001 Final
-
HYUNDAI -> hynix
-
Marking Information Change
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY62U8400ALLT2 | 512Kx8bit CMOS SRAM |
| HY62U8400ALLT2-E | 512Kx8bit CMOS SRAM |
| HY62U8400ALLT2-I | 512Kx8bit CMOS SRAM |
| HY62UF08401C | High Speed, Super Low Power and 4Mbit Full CMOS SRAM |
| HY62UF08401C-DS(I) | High Speed, Super Low Power and 4Mbit Full CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY62U8400ALLT2 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Kx8bit CMOS SRAM |
| HY62U8400ALLT2-E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Kx8bit CMOS SRAM |
| HY62U8400ALLT2-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Kx8bit CMOS SRAM |
| HY62UF08401C | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:High Speed, Super Low Power and 4Mbit Full CMOS SRAM |
| HY62UF08401C-DS(I) | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:High Speed, Super Low Power and 4Mbit Full CMOS SRAM |
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