欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): HY63V8400
廠商: Hynix Semiconductor Inc.
英文描述: 512Kx8Bit CMOS FAST SRAM
中文描述: 512Kx8Bit的CMOS快速靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù): 1/8頁(yè)
文件大小: 108K
代理商: HY63V8400
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.02 / Jan.99 Hyundai Semiconductor
HY63V8400 Series
512Kx8bit CMOS FAST SRAM
DESCRIPTION
PRELIMINARY
The HY63V8400 is a 4,194,304-bit high-speed
Static Random Access Memory organized as
524,288 words by 8-bits. The HY63V8400 uses
eight common input and output lines and has an
output enable pin which operates faster than.
address access time at read cycle. The device is
fabricated using Hyundai's advanced CMOS
process and designed for high-speed circuit
technology. It is particularly well suited for use in
high-density high-speed system applications
FEATURES
Single 3.3V±0.3V Power Supply
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Low data Retention Voltage:
- 2.0V(min) –L-ver. Only
Center Power/Ground Pin Configuration
Standard pin configuration
-
36pin 400mil SOJ
-
44pin 400mil TSOP-ll
Product
No.
HY63V8400
HY63V8400
HY63V8400
Supply
Voltage(V)
3.3
3.3
3.3
Speed
(ns)
10
12
15
Operation
Current(mA)
200
190
180
Standby Current(mA)
L
1
1
1
10
10
10
PIN CONNECTION BLOCK DIAGRAM
SOJ TSOP-II
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
I/O1~I/O8
Pin Function
Pin Name
A0~A18
Vcc
Vss
NC
Pin Function
Address Input
Power(+3.3V)
Ground
No Connection
Chip Select
Write Enable
Output Enable
Data Input/Output
NC
A13
A18
Vcc
Vss
I/A5
A6
1
2
3
4
5
6
7
8
9
10
36
SOJ
A 1 2
N C
A 1 7
IV c c
V s s
/W E
A 5
1
2
3
4
5
6
7
8
9
2 0
3 6
1 0
TSOP-II
N C
N C
4 3
4 4
ROW
DECODER
MEMORY ARRAY
512x1024x8
S
W
O
I/O1
I/O8
D
A
A0
A18
/CS
/OE
/WE
相關(guān)PDF資料
PDF描述
HY64UD16322A 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
HY64UD16322A-DF70E 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
HY64UD16322A-DF70I 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
HY64UD16322A-E 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
HY64UD16322A-I 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY6410 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Laser Diode Driver
HY64LD16162M 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16|2.5(VDD)2.5(VDDQ)V|85|Pseudo SRAM - 16M
HY64LD16162M-DF85C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PSEUDO-STATIC RAM|1MX16|CMOS|BGA|48PIN|PLASTIC
HY64LD16162M-DF85E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PSEUDO-STATIC RAM|1MX16|CMOS|BGA|48PIN|PLASTIC
HY64LD16162M-DF85I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PSEUDO-STATIC RAM|1MX16|CMOS|BGA|48PIN|PLASTIC
主站蜘蛛池模板: 年辖:市辖区| 永顺县| 民勤县| 三河市| 梅州市| 星座| 溧阳市| 惠安县| 昌黎县| 原平市| 河北区| 隆德县| 灵川县| 茌平县| 阿拉善右旗| 宾阳县| 银川市| 京山县| 壶关县| 红河县| 邮箱| 浦城县| 南昌市| 徐汇区| 塔城市| 石渠县| 谷城县| 柳林县| 平阳县| 资阳市| 桦南县| 东乌| 平远县| 和林格尔县| 汉川市| 三台县| 彰武县| 宁德市| 巩义市| 松江区| 班戈县|