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參數資料
| 型號： | HYB3116405BJ-70 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 4M x 4-Bit EDO-Dynamic RAM |
| 中文描述： | 4M X 4 EDO DRAM, 70 ns, PDSO24 |
| 文件頁數： | 1/26頁 |
| 文件大小： | 285K |
| 代理商： | HYB3116405BJ-70 |
Semiconductor Group 1 3.96
4 194 304 words by 4-bit organization
0 to 70 °C operating temperature
Performance
Single + 3.3 V (± 0.3V ) supply
Low power dissipation
max. 396 active mW (HYB3117405BJ/BT-50)
max. 363 active mW (HYB3117405BJ/BT-60)
max. 330 active mW (HYB3117405BJ/BT-70)
max. 360 active mW (HYB3116405BJ/BT-50)
max. 324 active mW (HYB3116405BJ/BT-60)
max. 288 active mW (HYB3116405BJ/BT-70)
7.2 mW standby (LV-TTL)
3.6 mW standby (LV-CMOS)
720
μ
W standby for L-version
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
Self Refresh and test mode
Hyper page mode (EDO) capability
All inputs, outputs and clocks fully TTL-compatible
2048 refresh cycles / 32 ms for HYB3117405
4096 refresh cycles / 64 ms for HYB3116405
Plastic Package:
P-SOJ-26/24-1 (300 mil)
P-TSOPII-26/24-1 (300mil)
-50
-60
-70
tRAC
tCAC
tAA
tRC
tHPC
RAS access time
50
60
70
ns
CAS access time
13
15
20
ns
Access time from address
25
30
35
ns
Read/Write cycle time
84
104
124
ns
Hyper page mode (EDO)
cycle time
20
25
30
ns
3.3V 4M x 4-Bit EDO-Dynamic RAM
Advanced Information
HYB3116405BJ/BT(L) -50/-60/-70
HYB3117405BJ/BT(L) -50/-60/-70
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PDF描述 |
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| HYB3117405BJ-60 | BCD?to?Seven?Segment Decoder IC; Output Current:250uA; Supply Current:3.5A; Supply Voltage:7V |
| HYB3116405BTL-60 | High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 |
| HYB3116405BTL-70 | High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 |
| HYB3117405BJ-50 | 3.3V 4M x 4-Bit EDO-Dynamic RAM |
| HYB3116405BJ-50 | 3.3V 4M x 4-Bit EDO-Dynamic RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HYB3116405BJBTL-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM |
| HYB3116405BT-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM |
| HYB3116405BT-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM |
| HYB3116405BT-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM |
| HYB3116405BTL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM |
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