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參數(shù)資料
型號(hào): HYB314100BJL-70
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
中文描述: 4M X 1 FAST PAGE DRAM, 70 ns, PDSO20
封裝: 0.300 INCH, PLASTIC, SOJ-20
文件頁(yè)數(shù): 1/23頁(yè)
文件大小: 1153K
代理商: HYB314100BJL-70
Semiconductor Group 1 4.96
4M x 1-Bit Dynamic RAM
Low Power 4M x 1-Bit Dynamic RAM
Advanced Information
4 194 304 words by 1-bit organization
0 to 70 C operating temperature
Fast Page Mode Operation
Performance:
Single + 3.3 V (
±
0.3 V ) supply with a built-in
V
bb
generator
Low power dissipation
max. 252 mW active (-50 version)
max. 216 mW active (-60 version)
max. 198 mW active (-70 version)
Standby power dissipation:
7.2 mW max. standby (TTL)
3.6 mW max. standby (CMOS)
720
μ
W max. standby (CMOS) for Low Power Version
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
All inputs and outputs TTL-compatible
1024 refresh cycles / 16 ms
1024 refresh cycles / 128 ms Low Power Version
Plastic Packages: P-SOJ-26/20-5 with 300 mil width
-50
-60
-70
t
RAC
t
CAC
t
AA
t
RC
t
PC
RAS access time
50
60
70
ns
CAS access time
13
15
20
ns
Access time from address
25
30
35
ns
Read/Write cycle time
95
110
130
ns
Fast page mode cycle time
35
40
45
ns
HYB 314100BJ/BJL -50/-60/-70
相關(guān)PDF資料
PDF描述
HYB 314175BJ-50 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16位 外延式數(shù)據(jù)輸出(EDO)動(dòng)態(tài)RAM)
HYB314175BJ-50- High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85
HYB314175BJ-55 High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85
HYB314175BJ-60 Transistor Array IC; Package/Case:16-DIP; Mounting Type:Through Hole
HYB 314175BJ-55 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16位 外延式數(shù)據(jù)輸出(EDO)動(dòng)態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB314171BJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJ-50- 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
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