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參數資料
| 型號： | HYB314265BJ-50 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16-Bit EDO-Dynamic RAM |
| 中文描述： | 256K X 16 EDO DRAM, 50 ns, PDSO40 |
| 文件頁數： | 1/28頁 |
| 文件大小： | 1324K |
| 代理商： | HYB314265BJ-50 |
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Semiconductor Group
1
The HYB 5(3)14265BJ(L) is the new generation dynamic RAM organized as 262 144 words by
16-bit. The HYB 5(3)14265BJ(L) utilizes the SIEMENS 16M-CMOS submicron silicon gate process
as well as advanced circuit techniques to provide wide operation margins, both internally and for the
system user. Multiplexed address inputs permit the HYB 5(3)14265BJ(L) to be packed in a
standard plastic 400mil wide P-SOJ-40-3 package. This package size provides high system bit
densities and is compatible with commonly used automatic testing and insertion equipment.
The HYB314265BJL parts have a very low power “sleep mode“ supported by Self Refresh.
256K x 16-Bit EDO-Dynamic RAM
Preliminary Information
262 144 words by 16-bit organization
0 to 70
°
C operating temperature
EDO - Hyper Page Mode
Performance:
Low Power dissipation
- Active(max.):
120mA / 120mA / 105mA / 95 mA
- Standby : TTL Inputs (max.) 2.0 mA
- Standby: CMOS Inputs (max.) 1.0 mA
- Standby (L-version) 200
μ
A
-400
-40
-45
-50
t
rc
t
rac
t
cac
t
aa
t
hpc
t
hpc
69
69
79
89
ns
40
40
45
50
ns
10
10
12
13
ns
20
20
22
25
ns
12,5
15
18
20
ns
80
66
55
50
MHz
Power Supply:
Read, write, read-modify-write, CAS -before
RAS refresh, RAS only refresh, hidden refresh
mode
Low Power Version (L) with Self Refresh
and 250
μ
A self refresh current
2 CAS / 1 WE control
All inputs and outputs TTL-compatible
512 refresh cycles / 16 ms
512 refresh cycles / 128 ms (L-version)
Plastic Packages: P-SOJ-40-3 400 mil width
HYB 514265BJ-400
+5 V
±
5%
±
10%
±
10%
±
10%
HYB 514265BJ-40
+5 V
HYB 514265BJ-45
+5 V
HYB 514265BJ-50
HYB 314265BJ(L)-45 +3.3 V
±
0.3 V
HYB 314265BJ(L)-50 +3.3 V
±
0.3 V
+5 V
6.96
HYB 514265BJ-400/40/-45/-50
HYB 314265BJ(L)-45/-50
相關PDF資料 |
PDF描述 |
|---|---|
| HYB314265BJL-45 | 256K x 16-Bit EDO-Dynamic RAM |
| HYB314265BJL-50 | 256K x 16-Bit EDO-Dynamic RAM |
| HYB514405BJ-70 | 1M x 4-Bit Dynamic RAM |
| HYB 514405BJ | 1M x 4-Bit Dynamic RAM(1M x 4-位動態 RAM (超級頁面EDO模式)) |
| HYB 514405BJL | 1M x 4-Bit Dynamic RAM(1M x 4-位動態 RAM (超級頁面EDO模式)) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HYB314265BJL-45 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256K x 16-Bit EDO-Dynamic RAM |
| HYB314265BJL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256K x 16-Bit EDO-Dynamic RAM |
| HYB314400BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM |
| HYB314400BJ-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM |
| HYB314400BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM |
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