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參數資料
| 型號： | HYB3165160T-50 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 4M x 16-Bit Dynamic RAM |
| 中文描述： | 4M X 16 FAST PAGE DRAM, 50 ns, PDSO54 |
| 文件頁數： | 1/26頁 |
| 文件大小： | 383K |
| 代理商： | HYB3165160T-50 |
Semiconductor Group
5
4 194 304 words by 16-bit organization
0 to 70 C operating temperature
Fast access and cycle time
RAS access time:
50 ns (-50 version)
60 ns (-60 version)
Cycle time:
90 ns (-50 version)
110 ns (-60 version)
CAS access time:
13 ns ( -50 version)
15 ns ( -60 version)
Fast page mode cycle time
35 ns (-50 version)
40 ns (-60 version)
Single + 3.3 V (
±
0.3V) power supply
Low power dissipation
max. 396 active mW ( HYB 3164160T-50)
max. 360 active mW ( HYB 3164160T-60)
max. 504 active mW ( HYB 3165160T-50)
max. 432 active mW ( HYB 3165160T-60)
7.2 mW standby (TTL)
720 W standby (MOS)
Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and self refresh modes
Fast page mode capability
2 CAS / 1 WRITE byte control
8192 refresh cycles/128 ms , 13 R/ 9C addresses (HYB 3164160T)
4096 refresh cycles/ 64 ms , 12 R/ 10C addresses (HYB 3165160T)
Plastic Package: P-TSOPII-54-1 500 mil
4M x 16-Bit Dynamic RAM
(4k & 8k Refresh)
Preliminary Information
HYB 3164160T -50/-60
HYB 3165160T -50/-60
相關PDF資料 |
PDF描述 |
|---|---|
| HYB3164160T-60 | 4M x 16-Bit Dynamic RAM |
| HYB3165160T-60 | 4M x 16-Bit Dynamic RAM |
| HYB39L128160AC | 128-MBIT SYNCHRONOUS LOW-POWER DRAM |
| HYB39L128160AC-75 | 128-MBIT SYNCHRONOUS LOW-POWER DRAM |
| HYB39L128160AC-8 | 128-MBIT SYNCHRONOUS LOW-POWER DRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HYB3165160T60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM |
| HYB3165160T-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3165165AT-40 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3165165AT-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3165165AT-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
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